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科研机构
半导体研究所 [11]
内容类型
期刊论文 [10]
会议论文 [1]
发表日期
2012 [2]
2011 [1]
2010 [1]
2008 [1]
2006 [2]
2005 [1]
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半导体材料 [11]
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Spacer layer thickness fluctuation scattering in a modulation-doped Al xGa1-xAs/GaAs/AlxGa1-xAs quantum well
期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 10, 页码: 107305
Gu, Cheng-Yan
;
Liu, Gui-Peng
;
Shi, Kai
;
Song, Ya-Feng
;
Li, Cheng-Ming
;
Liu, Xiang-Lin
;
Yang, Shao-Yan
;
Zhu, Qin-Sheng
;
Wang, Zhan-Guo
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/04/19
Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well
期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 10, 页码: 107305
Gu CY (Gu Cheng-Yan)
;
Liu GP (Liu Gui-Peng)
;
Shi K (Shi Kai)
;
Song YF (Song Ya-Feng)
;
Li CM (Li Cheng-Ming)
;
Liu XL (Liu Xiang-Lin)
;
Yang SY (Yang Shao-Yan)
;
Zhu QS (Zhu Qin-Sheng)
;
Wang ZG (Wang Zhan-Guo)
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2013/03/26
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures
期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP
;
Wu J
;
Lu YW
;
Li ZW
;
Song YF
;
Li CM
;
Yang SY
;
Liu XL
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/02/06
FIELD-EFFECT TRANSISTORS
INTERFACE ROUGHNESS
QUANTUM-WELLS
MOBILITY
HETEROJUNCTION
TRANSPORT
MODEL
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 044504
Li YB (Li Yanbo)
;
Zhang Y (Zhang Yang)
;
Zeng YP (Zeng Yiping)
收藏
  |  
浏览/下载:212/46
  |  
提交时间:2010/10/11
INAS/ALSB QUANTUM-WELLS
LOW-POWER APPLICATIONS
HEMTS
MODULATION
HETEROSTRUCTURES
TECHNOLOGY
CHANNEL
VOLTAGE
MASS
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/03/09
INDUCED REFRACTIVE-INDEX
GROWTH
LASERS
GAAS
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD
期刊论文
microelectronics journal, 2006, 卷号: 37, 期号: 7, 页码: 583-585
Ran JX
;
Wang XL
;
Hu GX
;
Wang JX
;
Li JP
;
Wang CM
;
Zeng YP
;
Li JM
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2010/04/11
GaN
Mg memory effect
redistribution
AlGaN/GaN HBTs
MOCVD
CHEMICAL-VAPOR-DEPOSITION
HETEROJUNCTION BIPOLAR-TRANSISTORS
FABRICATION
Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices
期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 6, 页码: art.no.063114
作者:
Xu B
;
Ye XL
;
Jin P
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2010/04/11
VERTICAL SELF-ORGANIZATION
QUANTUM WIRES
SURFACE
GROWTH
ALLOY
INALAS/INP(001)
NANOWIRES
INP(001)
ISLANDS
ARRAYS
Realization of highly uniform self-assembled InAs quantum wires by the strain compensating technique
期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 8, 页码: art.no.083108
Huang, XQ
;
Wang, YL
;
Li, L
;
Liang, L
;
Liu, FQ
收藏
  |  
浏览/下载:39/18
  |  
提交时间:2010/03/17
INP(001)
Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer
期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 49-54
作者:
Xu B
收藏
  |  
浏览/下载:58/0
  |  
提交时间:2010/08/12
photoluminescence
molecular beam epitaxy
nanomaterials
semiconducting III-V materials
SCANNING-TUNNELING-MICROSCOPY
GROWTH
INP
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer
期刊论文
journal of crystal growth, 2001, 卷号: 231, 期号: 4, 页码: 520-524
Cao X
;
Zeng YP
;
Kong MY
;
Pan LA
;
Wang BQ
;
Zhu ZP
;
Wang XG
;
Chang Y
;
Chu JH
收藏
  |  
浏览/下载:134/8
  |  
提交时间:2010/08/12
molecular beam epitaxy
semiconducting III-V materials
high electron mobility transistors
ELECTRON-MOBILITY TRANSISTOR
CARRIER DENSITY
QUANTUM-WELLS
BAND-GAP
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