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科研机构
半导体研究所 [35]
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期刊论文 [27]
会议论文 [8]
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2010 [2]
2008 [2]
2007 [2]
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半导体材料 [35]
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A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 018104
作者:
Jin P
收藏
  |  
浏览/下载:99/17
  |  
提交时间:2010/04/04
quantum-dot
tunable laser
external cavity
broadband tuning
NM TUNING RANGE
SUPERLUMINESCENT DIODES
LIGHT-SOURCE
WELL LASER
SPECTROSCOPY
SPECTRUM
Different growth mechanisms of bimodal In As/GaAs QDs
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 308-311
作者:
Ye XL
;
Zhou XL
收藏
  |  
浏览/下载:41/3
  |  
提交时间:2011/07/05
INAS QUANTUM DOTS
GAAS(001)
RELAXATION
TRANSITION
GAAS
The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition
期刊论文
vacuum, 2008, 卷号: 82, 期号: 5, 页码: 495-500
Zhu, BL
;
Sun, XH
;
Zha, XZ
;
Su, FH
;
Li, GH
;
Wu, XG
;
Wu, J
;
Wu, R
;
Liu, J
收藏
  |  
浏览/下载:46/1
  |  
提交时间:2010/03/08
PLD
ZnO films
substrate temperature
crystal quality
grain size
optical properties
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/03/09
INDUCED REFRACTIVE-INDEX
GROWTH
LASERS
GAAS
Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix
期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 10, 页码: art.no.103118
作者:
Xu B
;
Ye XL
;
Jin P
收藏
  |  
浏览/下载:75/0
  |  
提交时间:2010/03/29
INAS QUANTUM DOTS
Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling
期刊论文
spectroscopy and spectral analysis, 2007, 卷号: 27, 期号: 11, 页码: 2178-2181
Jia, GZ
;
Yao, JH
;
Zhang, CL
;
Shu, Q
;
Liu, RB
;
Ye, XL
;
Wang, ZG
收藏
  |  
浏览/下载:60/2
  |  
提交时间:2010/03/08
photoluminescence spectroscopy
quantum dot
bimodal distribution
state-filling
Porous ZnAl2O4 spinel nanorods doped with Eu3+: synthesis and photoluminescence
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 12, 页码: 2982-2987
Cheng BC
;
Qu SC
;
Zhou HY
;
Wang ZG
收藏
  |  
浏览/下载:118/0
  |  
提交时间:2010/04/11
SPRAY-PYROLYSIS TECHNIQUE
SOL-GEL PROCESS
ZINC ALUMINATE
OPTICAL-PROPERTIES
CATHODOLUMINESCENT CHARACTERISTICS
HYDROTHERMAL SYNTHESIS
NANOCRYSTALLINE
COMBUSTION
SPECTRA
METHANE
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Jiao YH (Jiao Y. H.)
;
Wu J (Wu J.)
;
Xu B (Xu B.)
;
Jin P (Jin P.)
;
Hu LJ (Hu L. J.)
;
Liang LY (Liang L. Y.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
metamorphic
long wavelength
quantum dots
molecular beam epitaxy
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
1.3 MU-M
GAAS
EMISSION
RANGE
ISLANDS
ARRAYS
LASERS
Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors
期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682
Li DL (Li Dong-Lin)
;
Zeng YP (Zeng Yi-Ping)
收藏
  |  
浏览/下载:66/0
  |  
提交时间:2010/04/11
HEMT
heterojunction
two dimentional electron gas
self-consistent calculation
FIELD-EFFECT TRANSISTOR
TRANSPORT-PROPERTIES
QUANTUM-WELLS
HEMTS
FREQUENCY
DENSITY
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 207-210
作者:
Jin P
;
Xu B
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
growth interruption
in segregation
surface oxide
molecular beam epitaxy
quantum dots
MOLECULAR-BEAM EPITAXY
GAAS
PHOTOLUMINESCENCE
LAYER
SHAPE
SIZE
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