Temperature dependence of surface quantum dots grown under frequent growth interruption

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	Temperature dependence of surface quantum dots grown under frequent growth interruption
	Jin P; Xu B
刊名	physica e-low-dimensional systems & nanostructures
	2006
卷号	33 期号:1 页码:207-210
关键词	growth interruption in segregation surface oxide molecular beam epitaxy quantum dots MOLECULAR-BEAM EPITAXY GAAS PHOTOLUMINESCENCE LAYER SHAPE SIZE
ISSN号	1386-9477
通讯作者	yu, lk, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: yulike@red.semi.ac.cn
中文摘要	we grow ingaas quantum dot (qd) at low growth rate with 70 times insertion of growth interruption in mbe system. it is found that because of the extreme growth condition, qds exhibit a thick wetting layer, large qd height value and special surface morphology which is attributed to the enhanced adatom surface diffusion and in-segregation effect. temperature dependence of photoluminescence measurement from surface qd shows that this kind of qd has good thermal stability which is explained in terms of the presence of surface oxide. the special distribution of qd may also play a role in this thermal character. (c) 2006 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10580]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P,Xu B. Temperature dependence of surface quantum dots grown under frequent growth interruption[J]. physica e-low-dimensional systems & nanostructures,2006,33(1):207-210.
APA	Jin P,&Xu B.(2006).Temperature dependence of surface quantum dots grown under frequent growth interruption.physica e-low-dimensional systems & nanostructures,33(1),207-210.
MLA	Jin P,et al."Temperature dependence of surface quantum dots grown under frequent growth interruption".physica e-low-dimensional systems & nanostructures 33.1(2006):207-210.