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科研机构
半导体研究所 [8]
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会议论文 [7]
期刊论文 [1]
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2006 [1]
2005 [1]
2004 [1]
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半导体材料 [8]
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The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:167/71
  |  
提交时间:2010/03/29
ALN
IMPURITIES
DONOR
Synthesis and luminescence of ZnMgS : Mn2+ nanoparticles
期刊论文
journal of nanoscience and nanotechnology, 2005, 卷号: 5, 期号: 9, 页码: 1465-1471
Zhang J
;
Su FH
;
Chen W
;
Sammynaiken R
;
Westcott SL
;
McCready DE
;
Li GH
;
Joly AG
收藏
  |  
浏览/下载:138/30
  |  
提交时间:2010/03/17
ZnMgS : Mn2+ nanoparticles
Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Sun, J
;
Hu, LZ
;
Sun, YC
;
Wang, ZY
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/03/29
GROWTH
Study on optical band gap of boron-doped nc-Si : H film
会议论文
symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002
Wei WS
;
Wang TM
;
Zhang CX
;
Li GH
;
Han HX
;
Ding K
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
AMORPHOUS-SILICON
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
会议论文
international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001
Sun GS
;
Luo MC
;
Wang L
;
Zhu SR
;
Li JM
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
3C-SiC
in-situ doping
low-pressure CVD
sapphire substrate
CHEMICAL-VAPOR-DEPOSITION
COMPETITION EPITAXY
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
会议论文
10th international conference on metalorganic vapor phase epitaxy (icmovpe-x), sapporo, japan, jun 05-09, 2000
Lu DC
;
Wang CX
;
Yuan HR
;
Liu XL
;
Wang XH
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
GaN
annealing treatment
In-doping
MOVPE
photoluminescence
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
BUFFER LAYER
FILMS
SAPPHIRE
Mechanism on exciton-mediated energy transfer in erbium-doped silicon
会议论文
international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999
Lei HB
;
Yang QQ
;
Ou HY
;
Wang QM
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/11/15
Er-doped silicon
photoluminescence
energy transfer
AL2O3 WAVE-GUIDES
ER
ELECTROLUMINESCENCE
EPITAXY
GAAS
High quality hydrogenated amorphous silicon films with significantly improved stability
会议论文
symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting, san francisco, ca, apr 14-17, 1998
Sheng SR
;
Liao XB
;
Ma ZX
;
Yue GZ
;
Wang YQ
;
Kong GL
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/10/29
A-SI-H
LIGHT SOAKING
PHOTOCONDUCTIVITY
INCREASE
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