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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Fabrication and luminescence characterization of two-dimensional GaAs-based photonic crystal nanocavities 期刊论文 acta physica sinica, 2010, 卷号: 59, 期号: 10, 页码: 7073-7077 Peng YS (Peng Yin-Sheng); Ye XL (Ye Xiao-Ling); Xu B (Xu Bo); Niu JB (Niu Jie-Bin); Jia R (Jia Rui); Wang ZG (Wang Zhan-Guo); Liang S (Liang Song); Yang XH (Yang Xiao-Hong) 收藏  |  浏览/下载：30/0  |  提交时间：2010/11/14 photonic crystal nanocavity   Resonant tunnelling diodes and high electron mobility transistors integrated on GaAs substrates 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 3, 页码: 697-700 Huang YL; Ma L; Yang FH; Wang LC; Zeng YP 收藏  |  浏览/下载：69/0  |  提交时间：2010/04/11 HETEROSTRUCTURE  OUTPUT   Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications 期刊论文 半导体学报, 2006, 卷号: 27, 期号: 6, 页码: 959-962 作者:  Zhang Yang 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/23 Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots 期刊论文 electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：77/0  |  提交时间：2010/04/11 SEMICONDUCTOR-DEVICES  TRANSPORT  STATES  BISTABILITY  VOLTAGE  LASERS  DIODE   Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文 chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang Y 收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11 resonant tunnelling diode  InP substrate  molecular beam epitaxy  high resolution transmission electron microscope  CURRENT-VOLTAGE CHARACTERISTICS  INTRINSIC BISTABILITY  CIRCUIT   Observation of the current-voltage plateau-like structure of resonant tunnelling diode with prewells under different magnetic fields 期刊论文 chinese physics, 2004, 卷号: 13, 期号: 6, 页码: 954-957 Zhang XX; Zeng YP; Qiu ZJ; Wang BQ; Zhu ZP 收藏  |  浏览/下载：121/37  |  提交时间：2010/03/09 resonant tunnelling diode   Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes 期刊论文 applied physics letters, 2004, 卷号: 84, 期号: 11, 页码: 1961-1963 Qiu ZJ; Gui YS; Guo SL; Dai N; Chu JH; Zhang XX; Zeng YP 收藏  |  浏览/下载：52/13  |  提交时间：2010/03/09 TRANSMISSION COEFFICIENT   Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells 期刊论文 semiconductor science and technology, 2001, 卷号: 16, 期号: 10, 页码: 822-825 作者:  Tan PH 收藏  |  浏览/下载：73/4  |  提交时间：2010/08/12 RESONANT-TUNNELING DIODES  DOTS  HOLES   GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES 期刊论文 applied physics letters, 1994, 卷号: 64, 期号: 25, 页码: 3416-3418 ZHANG YH; LI YX; JIANG DH; YANG XP; ZHANG PH 收藏  |  浏览/下载：18/0  |  提交时间：2010/11/15 ELECTRIC-FIELD DOMAINS  TUNNELING STRUCTURES  SYSTEMS