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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells 期刊论文 applied physics letters, 2012, 卷号: 100, 期号: 16, 页码: 162102 Liu, GP; Wu, J; Lu, YW; Zhao, GJ; Gu, CY; Liu, CB; Sang, L; Yang, SY; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：13/0  |  提交时间：2013/03/17 Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system 期刊论文 applied physics letters, 2011, 卷号: 99, 期号: 3, 页码: 32106 Jiang CY; Ma H; Yu JL; Liu Y; Chen YH 收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06 QUANTUM WIRES  OPTICAL-PROPERTIES  RECTIFICATION  FLUCTUATIONS   Alloy compositional fluctuation in InAlGaN epitaxial films 期刊论文 applied physics a-materials science & processing, 2005, 卷号: 80, 期号: 3, 页码: 649-652 Li, DB; Dong, X; Huang, J; Liu, X; Xu, Z; Zhang, Z; Wang, Z 收藏  |  浏览/下载：19/0  |  提交时间：2010/03/17 MULTIPLE-QUANTUM WELLS   Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD 期刊论文 journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 84-90 作者:  Li DB 收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12 surfaces  X-ray diffraction  growth from high temperature solutions  metalorganic chemical vapor deposition  nitrides  semiconducting III-V materials  TIME-RESOLVED PHOTOLUMINESCENCE  QUANTUM-WELL  LUMINESCENCE  DIODES  GAN   Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 140-144 Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH; Ge WK 收藏  |  浏览/下载：99/7  |  提交时间：2010/08/12 molecular beam epitaxy  quantum wells  BAND-GAP ENERGY  PHOTOLUMINESCENCE  TEMPERATURE  GANXAS1-X  FILMS   Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 501-505 作者:  Jiang DS 收藏  |  浏览/下载：147/24  |  提交时间：2010/08/12 molecular beam epitaxy  quantum wells  semiconducting IIIV materials  LUMINESCENCE  GAASN