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| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者: Yang T ; Yang XG; Wang KF
  收藏 | 浏览/下载：65/2 | 提交时间：2011/07/05
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| Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings 期刊论文
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG
收藏 | 浏览/下载：72/5 | 提交时间：2011/07/05
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| Ratchet effect induced by linearly polarized near- and mid-infrared radiation in InAs nanowires patterned quasi two-dimensional electron system 期刊论文
applied physics letters, 2011, 卷号: 99, 期号: 3, 页码: 32106
Jiang CY; Ma H; Yu JL; Liu Y; Chen YH
收藏 | 浏览/下载：15/0 | 提交时间：2012/02/06
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| Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏 | 浏览/下载：36/4 | 提交时间：2011/07/05
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| The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者: Song HP; Shi K; Sang L; Wei HY
收藏 | 浏览/下载：58/3 | 提交时间：2011/07/05
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| GaN grown with InGaN as a weakly bonded layer 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者: Wei HY; Song HP
收藏 | 浏览/下载：63/4 | 提交时间：2011/07/05
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| Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者: Yin ZG; Zhang XW; Tan HR; Fan YM; Zhang SG
收藏 | 浏览/下载：42/3 | 提交时间：2011/07/05
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| Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者: Li GK
收藏 | 浏览/下载：75/2 | 提交时间：2011/07/05
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| Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏 | 浏览/下载：93/5 | 提交时间：2011/07/05
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| Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者: Pan X
收藏 | 浏览/下载：20/0 | 提交时间：2011/09/14
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