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Surface characterization of AlGaN grown on Si (111) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 331, 期号: 1, 页码: 29-32
Pan X; Wang XL; Xiao HL; Wang CM; Feng C; Jiang LJ; Yin HB; Chen H
收藏  |  浏览/下载:17/0  |  提交时间:2012/01/06
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:  Wei HY;  Song HP;  Zhang B
收藏  |  浏览/下载:64/2  |  提交时间:2011/07/05
Surface roughness scattering in two dimensional electron gas channel 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG
收藏  |  浏览/下载:48/5  |  提交时间:2011/07/05
A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文
applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
作者:  Wei HY;  Song HP
收藏  |  浏览/下载:139/13  |  提交时间:2010/04/22
Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 17, 页码: 4153-4157
作者:  Wei TB;  Wei XC;  Duan RF
收藏  |  浏览/下载:84/6  |  提交时间:2010/03/08
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP
收藏  |  浏览/下载:54/0  |  提交时间:2010/03/09
Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures 期刊论文
journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25
Li C (Li Chun); Fang GJ (Fang Guojia); Fu Q (Fu Qiang); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong)
收藏  |  浏览/下载:21/0  |  提交时间:2010/04/11
Nanostructure in the p-layer and its impacts on amorphous silicon solar cells 期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1841-1846
Liao XB (Liao Xianbo); Du WH (Du Wenhui); Yang XS (Yang Xiesen); Povolny H (Povolny Henry); Xiang XB (Xiang Xianbi); Deng XM (Deng Xunming); Sun K (Sun Kai)
收藏  |  浏览/下载:179/0  |  提交时间:2010/04/11
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载:44/0  |  提交时间:2010/04/11
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载:55/0  |  提交时间:2010/04/11


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