×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [19]
内容类型
期刊论文 [17]
会议论文 [2]
发表日期
2013 [1]
2010 [1]
2009 [2]
2008 [2]
2006 [3]
2005 [1]
更多...
学科主题
半导体材料 [19]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共19条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Synthesis, properties, and top-gated metal–oxide–semiconductor field-effect transistors of p-type GaSb nanowires
期刊论文
RSC Advances, 2013, 期号: 43, 页码: 19834-19839
Guangwei Xu, Shaoyun Huang, Xiaoye Wang, Bin Yu, Hui Zhang, Tao Yang, H. Q. Xu and Lun Dai
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2014/02/12
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904
作者:
Jin P
;
Wei HY
;
Song HP
收藏
  |  
浏览/下载:185/32
  |  
提交时间:2010/05/04
alloying
annealing
electrical conductivity
excitons
II-VI semiconductors
magnesium compounds
MOCVD coatings
photoluminescence
positron annihilation
semiconductor thin films
vacancies (crystal)
wide band gap semiconductors
zinc compounds
SEMICONDUCTORS
EMISSION
ORIGIN
DIODES
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
收藏
  |  
浏览/下载:310/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114
作者:
Song HP
;
Wei HY
;
Zhang B
收藏
  |  
浏览/下载:198/0
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
semiconductor heterojunctions
semiconductor materials
valence bands
X-ray photoelectron spectra
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL
;
Sun GS
;
Guo Y
;
Zhang PF
;
Zhang RQ
;
Fan HB
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
收藏
  |  
浏览/下载:231/42
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
interface states
semiconductor heterojunctions
silicon compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study
期刊论文
european physical journal b, 2008, 卷号: 66, 期号: 4, 页码: 439-444
Shi HL
;
Duan Y
收藏
  |  
浏览/下载:151/26
  |  
提交时间:2010/03/08
SPECIAL QUASIRANDOM STRUCTURES
ZINCBLENDE
OFFSETS
GAASN
CDTE
BEO
Nanostructure in the p-layer and its impacts on amorphous silicon solar cells
期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1841-1846
Liao XB (Liao Xianbo)
;
Du WH (Du Wenhui)
;
Yang XS (Yang Xiesen)
;
Povolny H (Povolny Henry)
;
Xiang XB (Xiang Xianbi)
;
Deng XM (Deng Xunming)
;
Sun K (Sun Kai)
收藏
  |  
浏览/下载:179/0
  |  
提交时间:2010/04/11
amorphous semiconductors
solar cells
microstructure
OPEN-CIRCUIT VOLTAGE
MICROCRYSTALLINE SILICON
DISCONTINUITIES
FILMS
Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001)
期刊论文
solid state communications, 2006, 卷号: 137, 期号: 3, 页码: 126-128
作者:
Yin ZG
收藏
  |  
浏览/下载:83/0
  |  
提交时间:2010/04/11
magnetron sputtering
MnxGe1-x
ferromagnetism
N-TYPE GE
FERROMAGNETISM
SEMICONDUCTOR
SPINTRONICS
Aluminium doping induced enhancement of p-d coupling in ZnO
期刊论文
journal of physics-condensed matter, 2006, 卷号: 18, 期号: 11, 页码: 3081-3087
作者:
Han XX
;
Wei HY
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/04/11
ELECTRONIC-STRUCTURE CALCULATIONS
II-VI SEMICONDUCTORS
THIN-FILMS
PHOTOELECTRON-SPECTROSCOPY
DOPED ZNO
1ST-PRINCIPLES
CONDUCTION
STATES
Research progress of electronic properties of self-assembled semiconductor quantum dots
期刊论文
acta metallurgica sinica, 2005, 卷号: 41, 期号: 5, 页码: 463-470
作者:
Jin P
收藏
  |  
浏览/下载:48/13
  |  
提交时间:2010/03/17
self-assembled semiconductor quantum dot
©版权所有 ©2017 CSpace - Powered by
CSpace