CORC

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CORC

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Theoretical study on InxGa1-xN/GaN quantum dots solar cell 期刊论文
physica b-condensed matter, 2011, 卷号: 406, 期号: 1, 页码: 73-76
作者:  Hou QF;  Yin HB;  Deng QW
收藏  |  浏览/下载：92/9  |  提交时间：2011/07/05
Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment 期刊论文
physica status solidi-rapid research letters, 2011, 卷号: 5, 期号: 2, 页码: 74-76
作者:  You JB;  Zhang XW
收藏  |  浏览/下载：49/4  |  提交时间：2011/07/05
Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 20, 页码: art. no. 201102
You JB (You J. B.); Zhang XW (Zhang X. W.); Zhang SG (Zhang S. G.); Wang JX (Wang J. X.); Yin ZG (Yin Z. G.); Tan HR (Tan H. R.); Zhang WJ (Zhang W. J.); Chu PK (Chu P. K.); Cui B (Cui B.); Wowchak AM (Wowchak A. M.); Dabiran AM (Dabiran A. M.); Chow PP (Chow P. P.)
收藏  |  浏览/下载：225/45  |  提交时间：2010/06/18
Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083701
作者:  Tan HR;  Yin ZG;  You JB;  Zhang SG;  Zhang XW
收藏  |  浏览/下载：145/29  |  提交时间：2010/05/24
Determination of MgO/AlN heterojunction band offsets by x-ray photoelectron spectroscopy (vol 94, 052101, 2009) 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 12, 页码: art. no. 129901
作者:  Wei HY;  Song HP;  Jiao CM
收藏  |  浏览/下载：379/108  |  提交时间：2010/03/08
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:  Liu J;  Zhu H
收藏  |  浏览/下载：73/2  |  提交时间：2010/03/08
HEMT  2DEG  
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:  Jin P;  Wei HY;  Song HP
收藏  |  浏览/下载：310/47  |  提交时间：2010/03/08
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114
作者:  Song HP;  Wei HY;  Zhang B
收藏  |  浏览/下载：198/0  |  提交时间：2010/03/08
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：94/1  |  提交时间：2010/03/08
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL; Sun GS; Guo Y; Zhang PF; Zhang RQ; Fan HB; Liu XL; Yang SY; Zhu QS; Wang ZG
收藏  |  浏览/下载：231/42  |  提交时间：2010/03/08

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