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科研机构
半导体研究所 [68]
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会议论文 [43]
期刊论文 [25]
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2011 [1]
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2008 [9]
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半导体材料 [68]
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Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 10, 页码: 108503
Liang, DC
;
An, Q
;
Jin, P
;
Li, XK
;
Wei, H
;
Wu, J
;
Wang, ZG
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/02/06
InAlGaAs quantum dot
superluminescent diode
optical coherence tomography
short wavelength
OPTICAL COHERENCE TOMOGRAPHY
RESOLUTION
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS
;
Zhao, YM
;
Wang, L
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
in-situ doping
boron
aluminum
memory effects
hot-wall LPCVD
4H-SiC
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
buffer layer
LPCVD
High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Yan, JC
;
Wang, JX
;
Liu, Z
;
Liu, NX
;
Li, JM
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
DIODES
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:
Xu B
;
Jin P
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2010/03/09
INAS
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
PERFORMANCE
HETEROSTRUCTURES
OPTIMIZATION
MOBILITY
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:
Hou QF
;
Zhang ML
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/03/09
ALGAN/GAN HEMTS
Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Yin, HB
;
Wang, XL
;
Hu, GX
;
Ran, JX
;
Xiao, HL
;
Li, JM
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
Simulation and fabrication of the SiC-based clamped-clamped filter
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Zhao, YM
;
Ning, J
;
Sun, GS
;
Liu, XF
;
Wang, L
;
Ji, G
;
Wang, L
;
Zhao, WS
;
Li, JM
;
Yang, FH
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
MICROMECHANICAL RESONATORS
FREQUENCY
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