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科研机构
半导体研究所 [17]
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期刊论文 [11]
会议论文 [5]
学位论文 [1]
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2010 [1]
2006 [2]
2004 [3]
2002 [2]
2000 [1]
1999 [5]
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半导体材料 [17]
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Multi-wafer 3C-SiC heteroepitaxial growth on Si(100) substrates
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088101
Sun GS (Sun Guo-Sheng)
;
Liu XF (Liu Xing-Fang)
;
Wang L (Wang Lei)
;
Zhao WS (Zhao Wan-Shun)
;
Yang T (Yang Ting)
;
Wu HL (Wu Hai-Lei)
;
Yan GG (Yan Guo-Guo)
;
Zhao YM (Zhao Yong-Mei)
;
Ning J (Ning Jin)
;
Zeng YP (Zeng Yi-Ping)
;
Li JM (Li Jin-Min)
收藏
  |  
浏览/下载:172/19
  |  
提交时间:2010/09/07
3C-SiC
heteroepitaxial
multi-wafer
uniformity
Synthesis of GaN nanorods with vertebra-like morphology
会议论文
ieee international conference of nano/micro engineered and molecular systems, zhuhai, peoples r china, jan 18-21, 2006
Gao, HY (Gao, Haiyong)
;
Li, JM (Li, Jinmin)
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  |  
浏览/下载:112/30
  |  
提交时间:2010/03/29
GaN nanorods
Ga2O3/ZnO films
nitritding
morphology
CHEMICAL-VAPOR-DEPOSITION
FILMS
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:100/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces
会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Sun, GS
;
Ning, J
;
Zhang, YX
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:206/60
  |  
提交时间:2010/03/29
4H-SiC
LPCVD homoepitaxial growth
thermal oxidization
MOS structures
HOT-WALL CVD
Electrical properties and electroluminescence of 4H-SiC p-n junction diodes
期刊论文
journal of rare earths, 2004, 卷号: 22 sp.iss.si, 期号: 0, 页码: 275-278
Sun, GS
;
Zhang, YX
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:87/0
  |  
提交时间:2010/03/17
4H-SiC
Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
期刊论文
半导体学报, 2004, 卷号: 25, 期号: 12, 页码: 1549-1554
Sun Guosheng
;
Gao Xin
;
Zhang Yongxing
;
Wang Lei
;
Zhao Wanshun
;
Zeng Yiping
;
Li Jinmin
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/23
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
期刊论文
silicon carbide and related materials 2001 pts 1 and 2 proceedings, 2002, 卷号: 389-3, 期号: 0, 页码: 339-342
Sun GS
;
Luo MC
;
Wang L
;
Zhu SR
;
Li JM
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:78/0
  |  
提交时间:2010/08/12
3C-SiC
in-situ doping
low-pressure CVD
sapphire substrate
CHEMICAL-VAPOR-DEPOSITION
COMPETITION EPITAXY
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
会议论文
international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001
Sun GS
;
Luo MC
;
Wang L
;
Zhu SR
;
Li JM
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
3C-SiC
in-situ doping
low-pressure CVD
sapphire substrate
CHEMICAL-VAPOR-DEPOSITION
COMPETITION EPITAXY
Hydrogen-dependent lattice dilation in GaN
期刊论文
semiconductor science and technology, 2000, 卷号: 15, 期号: 6, 页码: 619-621
Zhang JP
;
Wang XL
;
Sun DZ
;
Kong MY
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
OPTICAL-PROPERTIES
GALLIUM NITRIDE
SAPPHIRE
EPILAYERS
STRESS
SEMICONDUCTORS
ELECTRONS
SILICON
STRAIN
FILMS
Hydrogen contaminant and its correlation with background electrons in GaN
期刊论文
semiconductor science and technology, 1999, 卷号: 14, 期号: 5, 页码: 403-405
Zhang JP
;
Sun DZ
;
Wang XL
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
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