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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The Comparison of Current Ratio ION/IOFF and Mobility Between SiGe Substrate and GaAs Substrate In₀.₂₃Ga₀.₇₇As Channel MOSFETs 期刊论文 IEEE Transactions on Electron Devices, 2016, 卷号: 63, 期号: 8, 页码: 3084-3087 Xiangting Kong; Renrong Liang; Xuliang Zhou; Shiyan Li; Mengqi Wang; Honggang Liu; Jing Wang; Wei Wang; Jiaoqing Pan 收藏  |  浏览/下载：31/0  |  提交时间：2017/03/10 High-Mobility In0.23Ga0.77As Channel MOSFETs Grown on Ge/Si Virtual Substrate by MOCVD 期刊论文 ieee transactions on electron devices, 2015, 卷号: 62, 期号: 5, 页码: 1456-1459 Xiangting Kong; Xuliang Zhou; Shiyan Li; Hudong Chang; Honggang Liu; Jing Wang; Renrong Liang; Wei Wang; Jiaoqing Pan 收藏  |  浏览/下载：23/0  |  提交时间：2016/03/23 High-Performance In0.23Ga0.77As Channel MOSFETs with High Current Ratio on/ off Grown on Semi-insulating GaAs Substrates by MOCVD 期刊论文 chinese physics letters, 2015, 卷号: 32, 期号: 3, 页码: 37301-37303 XiangTing Kong; XuLiang Zhou; ShiYan Li; LiJun Qiao; HongGang Liu; Wei Wang; JiaoQing Pan 收藏  |  浏览/下载：30/0  |  提交时间：2016/03/23 Nano-layer structure of silicon-on-insulator materials 会议论文 11th seoul international symposium on the physics of semiconductors and applications, seoul, south korea, aug 20-23, 2002 Wang X; Chen M; Chen J; Wang X; Dong YN; Liu XH; He P; Tian LL; Liu ZL 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15 SOI  nanostructure  microelectronic materials   THE DEPENDENCE OF THE INVERSION LAYER THICKNESS ON THE FILM THICKNESS IN THIN-FILM SOI STRUCTURES 期刊论文 chinese physics, 1991, 卷号: 11, 期号: 3, 页码: 716-719 XIA YW; WANG SW 收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15 MOSFETS  REDUCTION