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Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer 期刊论文
chinese physics letters, 2014, 卷号: 31, 期号: 12, 页码: 128101
Zhou Xu-Liang; Pan Jiao-Qing; Yu Hong-Yan; Li Shi-Yan; Wang Bao-Jun; Bian Jing; Wang Wei
收藏  |  浏览/下载：13/0  |  提交时间：2015/03/19
Spacer layer thickness fluctuation scattering in a modulation-doped Al xGa1-xAs/GaAs/AlxGa1-xAs quantum well 期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 10, 页码: 107305
Gu, Cheng-Yan; Liu, Gui-Peng; Shi, Kai; Song, Ya-Feng; Li, Cheng-Ming; Liu, Xiang-Lin; Yang, Shao-Yan; Zhu, Qin-Sheng; Wang, Zhan-Guo
收藏  |  浏览/下载：22/0  |  提交时间：2013/04/19
Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well 期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 10, 页码: 107305
Gu CY (Gu Cheng-Yan); Liu GP (Liu Gui-Peng); Shi K (Shi Kai); Song YF (Song Ya-Feng); Li CM (Li Cheng-Ming); Liu XL (Liu Xiang-Lin); Yang SY (Yang Shao-Yan); Zhu QS (Zhu Qin-Sheng); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：23/0  |  提交时间：2013/03/26
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：23/0  |  提交时间：2012/02/06
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93708
作者:  Zhang XW
收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05
Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者:  Yang T
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：49/4  |  提交时间：2011/07/05
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载：26/0  |  提交时间：2012/01/06

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