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Epitaxial growth and optical properties of Al- and N-polar AlN films by laser molecular beam epitaxy 期刊论文
journal of physics d-applied physics, 2014, 卷号: 47, 期号: 12, 页码: 125303
Chen, XW; Jia, CH; Chen, YH; Wang, HT; Zhang, WF
收藏  |  浏览/下载：16/0  |  提交时间：2015/04/02
Influence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO Films Prepared by Laser-Molecular Beam Epitaxy 期刊论文
journal of materials science and technology, 2013, 卷号: 29, 期号: 12, 页码: 1134-1138
Liu, Yunyan; Yang, Shanying; Wei, Gongxiang; Pan, Jiaoqing; Yuan, Yuzhen; Cheng, Chuanfu
收藏  |  浏览/下载：21/0  |  提交时间：2014/04/30
Multi-channel DFB laser array fabricated by SAG with optimized epitaxy conditions 期刊论文
chinese optics letters, 2013, 卷号: 11, 期号: 4, 页码: 041401
Zhang, Can; Liang, Song; Ma, Li; Han, Liangshun; Zhu, Hongliang
收藏  |  浏览/下载：9/0  |  提交时间：2013/08/27
Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者:  Xu B
收藏  |  浏览/下载：51/3  |  提交时间：2011/07/05
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
InP-based deep-ridge NPN transistor laser 期刊论文
optics letters, 2011, 卷号: 36, 期号: 16, 页码: 3206-3208
Liang S; Kong DH; Zhu HL; Zhao LJ; Pan JQ; Wang W
收藏  |  浏览/下载：21/0  |  提交时间：2011/09/14
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:  Yang T;  Yang XG;  Wang KF
收藏  |  浏览/下载：63/2  |  提交时间：2011/07/05
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏  |  浏览/下载：36/4  |  提交时间：2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：80/4  |  提交时间：2011/07/05

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