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科研机构
半导体研究所 [11]
内容类型
期刊论文 [8]
会议论文 [3]
发表日期
2011 [1]
2010 [1]
2009 [1]
2007 [1]
2006 [1]
2004 [3]
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半导体材料 [11]
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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS
会议论文
34th ieee photovoltaic specialists conference, philadelphia, pa, 2009
Peng WB (Peng Wenbo)
;
Zeng XB (Zeng Xiangbo)
;
Liu SY (Liu Shiyong)
;
Xiao HB (Xiao Haibo)
;
Kong GL (Kong Guanglin)
;
Yu YD (Yu Yude)
;
Liao XB (Liao Xianbo)
收藏
  |  
浏览/下载:252/64
  |  
提交时间:2010/08/16
Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
期刊论文
journal of optoelectronics and advanced materials, 2009, 卷号: 11, 期号: 8, 页码: 1122-1126
Li H
;
Wang Z
;
Zhou K
;
Pang JB
;
Ke JY
;
Zhao YW
收藏
  |  
浏览/下载:58/1
  |  
提交时间:2010/03/08
GaSb
Proton irradiation
Defects
Positron lifetime
Photoluminescence
Identification of vacancies in electron irradiated GaSb by coincidence Doppler broadening spectroscopy
期刊论文
materials letters, 2007, 卷号: 61, 期号: 4-5, 页码: 1187-1189
Shao, YD (Shao, Y. D.)
;
Wang, Z (Wang, Z.)
;
Dai, YQ (Dai, Y. Q.)
;
Zhao, YW (Zhao, Y. W.)
;
Tang, FY (Tang, F. Y.)
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/03/29
GaSb
Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure
期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383
Shu Q
;
Shu YC
;
Zhang GJ
;
Liu RB
;
Yao JH
;
Pi B
;
Xing XD
;
Lin YW
;
Xu JJ
;
Wang ZG
收藏
  |  
浏览/下载:65/0
  |  
提交时间:2010/04/11
two-dimensional electron gas
quantum Hall effect
SdH oscillations
persistent photoconductivity
HETEROSTRUCTURES
ALXGA1-XAS
SCATTERING
LIFETIME
MOBILITY
GAAS
TE
Gallium antisite defect and residual acceptors in undoped GaSb
期刊论文
physics letters a, 2004, 卷号: 332, 期号: 3-4, 页码: 286-290
Hu WG
;
Wang Z
;
Su BF
;
Dai YQ
;
Wang SJ
;
Zhao YW
收藏
  |  
浏览/下载:177/66
  |  
提交时间:2010/03/09
GaSb
Defects in GaSb studied by coincidence Doppler broadening measurements
会议论文
13th international conference on positron annihilation (icpa-13), kyoto, japan, sep 07-12, 2003
Hu WG
;
Wang Z
;
Dai YQ
;
Wang SJ
;
Zhao YW
收藏
  |  
浏览/下载:25/1
  |  
提交时间:2010/10/29
coincidence Doppler broadening
defects
GaSb
positron annihilation
Defects in GaSb studied by coincidence Doppler broadening measurements
期刊论文
positron annihilation, 2004, 卷号: icpa-13 proceedings, 期号: 445-6, 页码: 114-116
Hu, WG
;
Wang, Z
;
Dai, YQ
;
Wang, SJ
;
Zhao, YW
收藏
  |  
浏览/下载:129/19
  |  
提交时间:2010/03/09
coincidence Doppler broadening
defects
GaSb
positron annihilation
Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots
期刊论文
journal of crystal growth, 2000, 卷号: 220, 期号: 1-2, 页码: 51-55
Liu BL
;
Xu ZY
;
Liu HY
;
Wang ZG
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/08/12
InAlAs/AlGaAs
quantum dots
photoluminescence
time-resolved photoluminescence
LIFETIME
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy
期刊论文
materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 72, 期号: 2-3, 页码: 189-192
作者:
Yu F
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/08/12
solid phase epitaxy
silicon on sapphire (SOS)
carrier mobility
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