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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102 Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG 收藏  |  浏览/下载：40/4  |  提交时间：2011/07/05 EPITAXIAL LAYERS  PHOTOLUMINESCENCE  ABSORPTION  CARBON  BAND   Effects of Hydrogen Plasma Treatment on the Electrical and Optical Properties of ZnO Films: Identification of Hydrogen Donors in ZnO 期刊论文 acs applied materials & interfaces, 2010, 卷号: 2, 期号: 6, 页码: 1780-1784 Dong JJ (Dong J. J.); Zhang XW (Zhang X. W.); You JB (You J. B.); Cai PF (Cai P. F.); Yin ZG (Yin Z. G.); An Q (An Q.); Ma XB (Ma X. B.); Jin P (Jin P.); Wang ZG (Wang Z. G.); Chu PK (Chu Paul K.) 收藏  |  浏览/下载：151/22  |  提交时间：2010/07/05 hydrogen plasma treatment  zinc oxide  Raman spectroscopy  photoluminescence  RAMAN-SCATTERING  IMPLANTED ZNO  THIN-FILMS  DENSITY   MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793 Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo) 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 2DEG   Room-temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in AlXGa1-XN/GaN heterostructures 期刊论文 applied physics letters, 2007, 卷号: 91, 期号: 7, 页码: art.no.071920 Tang YQ; Shen B; He XW; Han K; Tang N; Chen WH; Yang ZJ; Zhang GY; Chen YH; Tang CG; Wang ZG; Cho KS; Chen YF 收藏  |  浏览/下载：65/0  |  提交时间：2010/03/29 POLARIZATION   Pseudospin in Si delta-doped InAlAs/InGaAs/InAlAs single quantum well 期刊论文 solid state communications, 2007, 卷号: 142, 期号: 7, 页码: 393-397 Zhou WZ; Huang ZM; Qiu ZJ; Lin T; Shang LY; Li DL; Gao HL; Cui LJ; Zeng YP; Guo SL; Gui YS; Dai N; Chu JH 收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29 quantum wells   Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765 Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11 AlGaN/AlN/GaN  two-dimensional electron gas  MOCVD  ALGAN/GAN HETEROSTRUCTURES  POLARIZATION  TRANSISTORS  GANHEMTS  GAS   DEEP CENTER SCATTERING POTENTIAL IN INGAP 期刊论文 journal of applied physics, 1994, 卷号: 76, 期号: 11, 页码: 7410-7414 ZHU QS; HIRAMATSU K; SAWAKI N; AKASAKI I; LIU XN 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 SEMICONDUCTORS  DEFECTS  VACANCY  SILICON  LEVEL  LPE