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The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.); Chen YH (Chen Y. H.); Tang CG (Tang C. G.); Liang LY (Liang L. Y.); Jin P (Jin P.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载:13/0  |  提交时间:2010/12/05
Magnetic Properties of FePt Nanoparticles Prepared by a Micellar Method 期刊论文
nanoscale research letters, 2010, 卷号: 5, 期号: 1, 页码: 1-6
作者:  You JB;  Zhang XW;  Yin ZG
收藏  |  浏览/下载:203/39  |  提交时间:2010/04/04
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS; Zhao, YM; Wang, L; Wang, L; Zhao, WS; Liu, XF; Ji, G; Zeng, YP
收藏  |  浏览/下载:40/0  |  提交时间:2010/03/09
Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE 期刊论文
physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409
Wang XY (Wang Xiaoyan); Wang XL (Wang Xiaoliang); Wang BZ (Wang Baozhu); Xiao HL (Xiao Hongling); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Li AN (Li Antnin)
收藏  |  浏览/下载:46/0  |  提交时间:2010/03/29
Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation 期刊论文
international journal of nanotechnology, 2006, 卷号: 3, 期号: 4 sp.iss.si, 页码: 492-516
Zhu, XF (Zhu, Xianfang); Wang, ZG (Wang, Zhanguo)
收藏  |  浏览/下载:60/0  |  提交时间:2010/03/29
In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 4, 页码: 927-930
Han, YH; Luo, JF; Hao, AM; Gao, CX; Xie, HS; Qu, SC; Liu, HW; Zou, GT
收藏  |  浏览/下载:36/0  |  提交时间:2010/03/17
Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 10, 页码: 1205-1210
Sun Guosheng; Zhang Yongxing; Gao Xin; Wang Junxi; Wang Lei; Zhao Wanshun; Wang Xiaoliang; Zeng Yiping; Li Jinmin
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/23
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN 期刊论文
science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626
作者:  Zhang SM
收藏  |  浏览/下载:252/65  |  提交时间:2010/08/12
Side radical influence on the nonlinear optical properties and thermal stability of poled polymer films 期刊论文
journal of materials science, 2002, 卷号: 37, 期号: 22, 页码: 4853-4855
Pan QW; Fang CS; Qin ZH; Gu QT; Shi W; Yu JZ
收藏  |  浏览/下载:33/0  |  提交时间:2010/08/12
X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32
Pan Z; Wang YT; Li LH; Zhang W; Lin YW; Zhou ZQ; Wu RH
收藏  |  浏览/下载:48/0  |  提交时间:2010/08/12


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