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科研机构
半导体研究所 [11]
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期刊论文 [10]
会议论文 [1]
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2010 [2]
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半导体材料 [11]
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The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 8, 页码: art. no. 083513
Zhou GY (Zhou G. Y.)
;
Chen YH (Chen Y. H.)
;
Tang CG (Tang C. G.)
;
Liang LY (Liang L. Y.)
;
Jin P (Jin P.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/12/05
QUANTUM-DOT SYSTEM
ISLAND FORMATION
IN-SITU
EVOLUTION
GAAS
PHOTOLUMINESCENCE
Magnetic Properties of FePt Nanoparticles Prepared by a Micellar Method
期刊论文
nanoscale research letters, 2010, 卷号: 5, 期号: 1, 页码: 1-6
作者:
You JB
;
Zhang XW
;
Yin ZG
收藏
  |  
浏览/下载:203/39
  |  
提交时间:2010/04/04
FePt nanoparticles
Reverse micelles
Self-assembly
Interparticle exchange coupling
Magnetic recording
FILMS
ANISOTROPY
FUTURE
LIMITS
MEDIA
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS
;
Zhao, YM
;
Wang, L
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/03/09
in-situ doping
boron
aluminum
memory effects
hot-wall LPCVD
4H-SiC
Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE
期刊论文
physica status solidi a-applications and materials science, 2007, 卷号: 204, 期号: 10, 页码: 3405-3409
Wang XY (Wang Xiaoyan)
;
Wang XL (Wang Xiaoliang)
;
Wang BZ (Wang Baozhu)
;
Xiao HL (Xiao Hongling)
;
Wang JX (Wang Junxi)
;
Zeng YP (Zeng Yiping)
;
Li AN (Li Antnin)
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  |  
浏览/下载:46/0
  |  
提交时间:2010/03/29
MOLECULAR-BEAM EPITAXY
Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation
期刊论文
international journal of nanotechnology, 2006, 卷号: 3, 期号: 4 sp.iss.si, 页码: 492-516
Zhu, XF (Zhu, Xianfang)
;
Wang, ZG (Wang, Zhanguo)
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  |  
浏览/下载:60/0
  |  
提交时间:2010/03/29
nanocavity
nanoparticle
nanoinstabilities
open volume defect
thermodynamic nonequilibrium
nanosize
nanotime
energetic beam irradiation
amorphous structure
nanocurvature
surface energy
WALLED CARBON NANOTUBES
AMORPHOUS-SILICON
ION IRRADIATION
PREFERENTIAL AMORPHIZATION
IN-SITU
INSTABILITY
BEAM
IMPLANTATION
CAVITIES
POINT
In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure
期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 4, 页码: 927-930
Han, YH
;
Luo, JF
;
Hao, AM
;
Gao, CX
;
Xie, HS
;
Qu, SC
;
Liu, HW
;
Zou, GT
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  |  
浏览/下载:36/0
  |  
提交时间:2010/03/17
SUPERCONDUCTIVITY
Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides
期刊论文
半导体学报, 2004, 卷号: 25, 期号: 10, 页码: 1205-1210
Sun Guosheng
;
Zhang Yongxing
;
Gao Xin
;
Wang Junxi
;
Wang Lei
;
Zhao Wanshun
;
Wang Xiaoliang
;
Zeng Yiping
;
Li Jinmin
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/23
Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN
期刊论文
science in china series e-technological sciences, 2003, 卷号: 46, 期号: 6, 页码: 620-626
作者:
Zhang SM
收藏
  |  
浏览/下载:252/65
  |  
提交时间:2010/08/12
gallium nitride
MOCVD
in situ laser reflectometry
CHEMICAL-VAPOR-DEPOSITION
IN-SITU
SAPPHIRE SUBSTRATE
NUCLEATION LAYERS
FILMS
Side radical influence on the nonlinear optical properties and thermal stability of poled polymer films
期刊论文
journal of materials science, 2002, 卷号: 37, 期号: 22, 页码: 4853-4855
Pan QW
;
Fang CS
;
Qin ZH
;
Gu QT
;
Shi W
;
Yu JZ
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/08/12
CHROMOPHORE ELECTROSTATIC INTERACTIONS
ENHANCEMENT
X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures
期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32
Pan Z
;
Wang YT
;
Li LH
;
Zhang W
;
Lin YW
;
Zhou ZQ
;
Wu RH
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
x-ray diffraction
strain relaxation
GaNxAs1-x/GaAs
photoluminescence
RHEED
MOLECULAR-BEAM EPITAXY
TEMPERATURE PULSED OPERATION
BAND-GAP ENERGY
NITROGEN
GAASN
GANXAS1-X
GAAS1-XNX
ALLOYS
LASERS
LAYERS
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