QQ客服 官方微博 反馈留言

浏览/检索结果: 共3条，第1-3条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 62-65 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：63/4  |  提交时间：2010/08/12 reflectance-difference spectroscopy  indium segregation  InGaAs/GaAs quantum wells  EPITAXY-GROWN INGAAS/GAAS  SURFACE SEGREGATION  INTERFACE   Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 reflectance-difference spectroscopy  indium segregation  InGaAs/GaAs quantum wells  EPITAXY-GROWN INGAAS/GAAS  SURFACE SEGREGATION  INTERFACE   RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING 期刊论文 physics letters a, 1994, 卷号: 189, 期号: 5, 页码: 423-427 XU TB; ZHU PR; LI DQ; REN TQ; SUN HL; WAN SK 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15 LONGITUDINAL MODE-OPERATION  RUTHERFORD BACKSCATTERING  ERBIUM  ELECTROLUMINESCENCE  LASERS