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	Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
	Ye XL; Xu B
刊名	materials science and engineering b-solid state materials for advanced technology
	2002
卷号	91期号:0页码:62-65
关键词	reflectance-difference spectroscopy indium segregation InGaAs/GaAs quantum wells EPITAXY-GROWN INGAAS/GAAS SURFACE SEGREGATION INTERFACE
ISSN号	0921-5107
通讯作者	chen yh,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	the influence of the indium segregation on the interface asymmetry in ingaas/gaas quantum wells have been studied by reflectance-difference spectroscopy (rds). it is found that the anisotropy of the 2h1e (2hh --> 1e) transition is very sensitive to the degree of the interface asymmetry. calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. it demonstrates that the anisotropy intensity ratio of the 1l1e (1lh --> 1e) and 2h1e transitions measured by rds can be used to characterize the interface asymmetry. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11942]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Xu B. Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry[J]. materials science and engineering b-solid state materials for advanced technology,2002,91(0):62-65.
APA	Ye XL,&Xu B.(2002).Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry.materials science and engineering b-solid state materials for advanced technology,91(0),62-65.
MLA	Ye XL,et al."Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry".materials science and engineering b-solid state materials for advanced technology 91.0(2002):62-65.

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