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科研机构
半导体研究所 [14]
内容类型
期刊论文 [12]
会议论文 [2]
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2011 [1]
2008 [1]
2006 [4]
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半导体材料 [14]
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Nanostructural instability of single-walled carbon nanotubes during electron beam induced shrinkage
期刊论文
carbon, 2011, 卷号: 49, 期号: 9, 页码: 3120-3124
Zhu XF
;
Li LX
;
Huang SL
;
Wang ZG
;
Lu GQ
;
Sun CH
;
Wang LZ
收藏
  |  
浏览/下载:25/3
  |  
提交时间:2011/07/05
IRRADIATION
NANOCAVITY
The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition
期刊论文
vacuum, 2008, 卷号: 82, 期号: 5, 页码: 495-500
Zhu, BL
;
Sun, XH
;
Zha, XZ
;
Su, FH
;
Li, GH
;
Wu, XG
;
Wu, J
;
Wu, R
;
Liu, J
收藏
  |  
浏览/下载:46/1
  |  
提交时间:2010/03/08
PLD
ZnO films
substrate temperature
crystal quality
grain size
optical properties
ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target
期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845
Zhao J (Zhao Jie)
;
Hu LZ (Hu Lizhong)
;
Wang ZY (Wang Zhaoyang)
;
Sun J (Sun Jie)
;
Wang ZJ (Wang Zhijun)
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/04/11
ZnO
pulsed laser deposition
oxygen pressure
annealing
X-ray diffraction
photoluminescence
ULTRAVIOLET EMISSION
ROOM-TEMPERATURE
ZINC-OXIDE
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei)
;
Wang Q (Wang Qiang)
;
Li YG (Li Yuguo)
;
Xue CS (Xue Chengshan)
;
Zhuang HZ (Zhuang Huizhao)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/04/11
ion implantation
annealing
chemical etching
photoluminescence
POROUS SILICON
LUMINESCENCE
Synthesis and temperature-dependent near-band-edge emission of chain-like Mg-doped ZnO nanoparticles
期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 10, 页码: art.no.101902
Peng WQ
;
Qu SC
;
Cong GW
;
Wang ZG
收藏
  |  
浏览/下载:625/5
  |  
提交时间:2010/04/11
OPTICAL-PROPERTIES
ROOM-TEMPERATURE
PHOTOLUMINESCENCE
GROWTH
ALLOY
FILMS
Electron irradiation-induced defects in InP pre-annealed at high temperature
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383
Zhao YW (Zhao Y. W.)
;
Dong ZY (Dong Z. Y.)
;
Deng AH (Deng A. H.)
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/04/11
indium phosphide
defect
irradiation
THERMALLY STIMULATED CURRENT
UNDOPED SEMIINSULATING INP
DEEP-LEVEL DEFECTS
FRENKEL PAIRS
FE
SPECTROSCOPY
PHOSPHIDE
AMBIENT
TRAPS
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
neutron irradiation
annealing
defects in silicon
SPECTRA
Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 791-794
Zhuang QD
;
Li JM
;
Wang XX
;
Zeng YP
;
Wang YT
;
Wang BQ
;
Pan L
;
Wu J
;
Kong MY
;
Lin LY
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/08/12
InGaAs/GaAs
quantum dots
superlattice
annealing
X-ray
MOLECULAR-BEAM EPITAXY
INFRARED PHOTODETECTORS
STRAIN RELAXATION
LUMINESCENCE
HETEROSTRUCTURES
DEPENDENCE
ABSORPTION
THRESHOLD
OPERATION
ISLANDS
Mechanism on exciton-mediated energy transfer in erbium-doped silicon
会议论文
international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999
Lei HB
;
Yang QQ
;
Ou HY
;
Wang QM
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2010/11/15
Er-doped silicon
photoluminescence
energy transfer
AL2O3 WAVE-GUIDES
ER
ELECTROLUMINESCENCE
EPITAXY
GAAS
Mechanism on exciton-mediated energy transfer in erbium-doped silicon
期刊论文
optical materials, 2000, 卷号: 14, 期号: 3, 页码: 255-258
Lei HB
;
Yang QQ
;
Ou HY
;
Wang QM
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
Er-doped silicon
photoluminescence
energy transfer
AL2O3 WAVE-GUIDES
ER
ELECTROLUMINESCENCE
EPITAXY
GAAS
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