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科研机构
半导体研究所 [152]
内容类型
期刊论文 [129]
会议论文 [23]
发表日期
2011 [7]
2010 [7]
2009 [8]
2008 [9]
2007 [3]
2006 [19]
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半导体材料 [152]
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Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L
;
Zhou, HY
;
Qu, SC
;
Wang, ZG
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  |  
浏览/下载:91/0
  |  
提交时间:2012/02/06
Patterned substrate
Ion implantation
Ordered nanodots
Anodic aluminum oxide
QUANTUM DOTS
ISLANDS
GROWTH
SEMICONDUCTORS
NANOSTRUCTURES
COMPUTATION
INGAAS
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:
Yin ZG
;
Zhang XW
;
Tan HR
;
Fan YM
;
Zhang SG
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  |  
浏览/下载:42/3
  |  
提交时间:2011/07/05
HIGH-PRESSURE SYNTHESIS
VAPOR-DEPOSITION
NUCLEATION
EMISSION
DIAMOND
GROWTH
Behavioural investigation of InN nanodots by surface topographies and phase images
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 44, 页码: 445306
Deng, QW
;
Wang, XL
;
Xiao, HL
;
Wang, CM
;
Yin, HB
;
Chen, H
;
Lin, DF
;
Li, JM
;
Wang, ZG
;
Hou, X
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  |  
浏览/下载:16/0
  |  
提交时间:2012/01/06
QUANTUM DOTS
SOLAR-CELLS
GROWTH
FILMS
GAN
High-quality homoepitaxial layers grown on4H-SiC at a high growth rate by vertical LPCVD
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43005
Wu, Hailei
;
Sun, Guosheng
;
Yang, Ting
;
Yan, Guoguo
;
Wang, Lei
;
Zhao, Wanshun
;
Liu, Xingfang
;
Zeng, Yiping
;
Wen, Jialiang
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/06/14
Epitaxial growth
Ethylene
Growth rate
Morphology
Surface roughness
Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.68502
Wu M
;
Zeng YP
;
Wang JX
;
Hu Q
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  |  
浏览/下载:49/2
  |  
提交时间:2011/07/05
LIGHT-EMITTING-DIODES
ULTRAVIOLET
GROWTH
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:
Wei HY
;
Song HP
;
Zhang B
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  |  
浏览/下载:64/2
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
CORE-LEVEL PHOTOEMISSION
SB-DOPED SNO2
INN
GROWTH
GAN
NAXWO3
ALLOYS
GREEN
STATE
Formation trends of ordered self-assembled nanoislands on stepped substrates
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.)
;
Zhu HL (Zhu H. L.)
;
Kong DH (Kong D. H.)
;
Wang W (Wang W.)
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/14
CHEMICAL-VAPOR-DEPOSITION
INAS QUANTUM DOTS
MOLECULAR-BEAM EPITAXY
GAAS
SURFACES
ISLANDS
GROWTH
FABRICATION
MIGRATION
ARRAYS
Growing 20 cm Long DWNTs/TWNTs at a Rapid Growth Rate of 80-90 mu m/s
期刊论文
chemistry of materials, 22 (4): feb 23 2010, 2010, 卷号: 22, 期号: 4, 页码: 1294-1296
Wen Q (Wen Qian)
;
Zhang RF (Zhang Rufan)
;
Qian WZ (Qian Weizhong)
;
Wang YR (Wang Yuran)
;
Tan PH (Tan Pingheng)
;
Nie JQ (NieJingqi)
;
Wei F (Wei Fei)
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  |  
浏览/下载:128/7
  |  
提交时间:2010/04/13
CHEMICAL-VAPOR-DEPOSITION
WALLED CARBON NANOTUBES
WATER
ULTRALONG
CATALYSTS
MECHANISM
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting)
;
Deng SK (Deng Shukang)
;
Shen LX (Shen Lanxian)
;
Yang PZ (Yang Peizhi)
;
Tu JL (Tu Jielei)
;
Liao H (Liao Hua)
;
Xu YQ (Xu Yingqiang)
;
Niu ZC (Niu Zhichuan)
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/12/28
Gallium Arsenide
Gallium antimonide
Gallium antimonide/Aluminum antimonide
Superlattices
Molecular Beam Epitaxy
VAPOR-PHASE EPITAXY
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
TEMPERATURE
RELAXATION
DETECTORS
GAAS(001)
MOCVD
FILMS
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