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CORC

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VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84328
Huang SL; Wu Y; Zhu XF; Li LX; Wang ZG; Wang LZ; Lu GQ
收藏  |  浏览/下载：29/0  |  提交时间：2011/07/05
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05
Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 2, 页码: 1169-1174
Peng YC (Peng Ying-Cai); Fan ZD (Fan Zhi-Dong); Bai ZH (Bai Zhen-Hua); Ma L (Ma Lei)
收藏  |  浏览/下载：141/29  |  提交时间：2010/04/21
Transport properties in a gated heterostructure with a trapezoidal AlxGa1-xAs barrier layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 41, 期号: 8, 页码: 1379-1381
作者:  Liu J;  Zhu H
收藏  |  浏览/下载：73/2  |  提交时间：2010/03/08
HEMT  2DEG  
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：94/1  |  提交时间：2010/03/08
Spin precession induced by an effective magnetic field in a two-dimensional electron gas 期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 23, 页码: art. no. 233108
作者:  Jia CH
收藏  |  浏览/下载：259/47  |  提交时间：2010/03/08
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839
Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
2DEG  
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793
Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29
2DEG  
Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11

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