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科研机构
半导体研究所 [59]
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期刊论文 [52]
会议论文 [7]
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2017 [1]
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半导体材料 [59]
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Growth and Characterization of InSb Thin Films on GaAs(001) without Any Buffer Layers by MBE
期刊论文
CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 7, 页码: 076105
作者:
Xiao-Meng Zhao
;
Yang Zhang
;
Li-Jie Cui
;
Min Guan
;
Bao-Qiang Wang
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2018/06/15
Growth and characterization of highly nitrogen doped ZnTe films on GaAs (001) by molecular beam epitaxy
期刊论文
materials science in semiconductor processing, 2015, 卷号: 29, 页码: 351-356
Linen Zhang
;
Chao Liu
;
Qiumin Yang
;
Lijie Cui
;
Yiping Zeng
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  |  
浏览/下载:10/0
  |  
提交时间:2016/03/29
Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy
期刊论文
applied surface science, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043
Yang QM
;
Zhao J
;
Guan M
;
Liu C
;
Cui LJ
;
Han DJ
;
Zeng YP
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2011/09/14
ELECTRICAL-PROPERTIES
OPTICAL-PROPERTIES
EPILAYERS
ZN1-XCDXSE
DEPOSITION
SUBSTRATE
ZNSE
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101
Cao YL (Cao Yu-Lian)
;
Yang T (Yang Tao)
;
Xu PF (Xu Peng-Fei)
;
Ji HM (Ji Hai-Ming)
;
Gu YX (Gu Yong-Xian)
;
Wang XD (Wang Xiao-Dong)
;
Wang Q (Wang Qing)
;
Ma WQ (Ma Wen-Quan)
;
Chen LH (Chen Liang-Hui)
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  |  
浏览/下载:221/51
  |  
提交时间:2010/05/24
excited states
gallium arsenide
III-V semiconductors
indium compounds
laser tuning
optical films
quantum dot lasers
silicon compounds
tantalum compounds
TEMPERATURE-DEPENDENCE
THRESHOLD
PERFORMANCE
GAIN
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting)
;
Deng SK (Deng Shukang)
;
Shen LX (Shen Lanxian)
;
Yang PZ (Yang Peizhi)
;
Tu JL (Tu Jielei)
;
Liao H (Liao Hua)
;
Xu YQ (Xu Yingqiang)
;
Niu ZC (Niu Zhichuan)
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/12/28
Gallium Arsenide
Gallium antimonide
Gallium antimonide/Aluminum antimonide
Superlattices
Molecular Beam Epitaxy
VAPOR-PHASE EPITAXY
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
TEMPERATURE
RELAXATION
DETECTORS
GAAS(001)
MOCVD
FILMS
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
期刊论文
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Li YB (Li Yanbo)
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  |  
浏览/下载:148/33
  |  
提交时间:2010/06/04
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting II-VI materials
Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 mu m
期刊论文
thin solid films, 2007, 卷号: 515, 期号: 10, 页码: 4348-4351
Wang SM
;
Tangring I
;
Gu QF
;
Sadeghi M
;
Larsson A
;
Wang XD
;
Ma CH
;
Buyanova IA
;
Chen WM
收藏
  |  
浏览/下载:116/0
  |  
提交时间:2010/03/29
metamorphic
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 337-340
Zhou HY
;
Qu SC
;
Wang ZG
;
Liang LY
;
Cheng BC
;
Liu JP
;
Peng WQ
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/04/11
anodic alumina films
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Zhou HY
;
Qu SC
;
Wang ZG
;
Liang LY
;
Cheng BC
;
Liu JP
;
Peng WQ
收藏
  |  
浏览/下载:132/26
  |  
提交时间:2010/03/29
anodic alumina films
Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions
期刊论文
thin solid films, 2005, 卷号: 476, 期号: 1, 页码: 68-72
Sun, J
;
Jin, P
;
Wang, ZG
;
Zhang, HZ
;
Wang, ZY
;
Hu, LZ
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  |  
浏览/下载:34/0
  |  
提交时间:2010/03/17
liquid phase epitaxy (LPE)
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