Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy

	Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy
	Yang QM ; Zhao J ; Guan M ; Liu C ; Cui LJ ; Han DJ ; Zeng YP
刊名	applied surface science
	2011
卷号	257 期号:21 页码:9038-9043
关键词	ELECTRICAL-PROPERTIES OPTICAL-PROPERTIES EPILAYERS ZN1-XCDXSE DEPOSITION SUBSTRATE ZNSE
ISSN号	0169-4332
通讯作者	zeng, yp (reprint author), chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. ypzeng@red.semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	knowledge innovation program foundation of institute of semiconductors, cas[09s1010001]; national natural science foundation of china[0913120000]
公开日期	2011-09-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22615]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yang QM,Zhao J,Guan M,et al. Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy[J]. applied surface science,2011,257(21):9038-9043.
APA	Yang QM.,Zhao J.,Guan M.,Liu C.,Cui LJ.,...&Zeng YP.(2011).Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy.applied surface science,257(21),9038-9043.
MLA	Yang QM,et al."Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy".applied surface science 257.21(2011):9038-9043.