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CORC

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Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor 期刊论文
chin. phys. b, 2013, 卷号: 22, 期号: 6, 页码: 067203
Yu Ying-Xia, Lin Zhao-Jun, Luan Chong-Biao, Wang Yu-Tang, Chen Hong, Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Design of 1-THz field effect transistor detectors in 180-nm standard CMOS process 期刊论文
proceedings of spie - the international society for optical engineering, 2013, 卷号: 8909, 页码: 89091e
Liu, Zhao-Yang; Liu, Li-Yuan; Wu, Nan-Jian
收藏  |  浏览/下载：9/0  |  提交时间：2014/04/28
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：23/0  |  提交时间：2012/02/06
Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.74512
Lv YJ; Lin ZJ; Corrigan TD; Zhao JZ; Cao ZF; Meng LG; Luan CB; Wang ZG; Chen H
收藏  |  浏览/下载：64/6  |  提交时间：2011/07/05
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：56/2  |  提交时间：2011/07/05
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
收藏  |  浏览/下载：36/0  |  提交时间：2012/01/06
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
applied physics a-materials science & processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi Y;  Lin DF;  Peng EC
收藏  |  浏览/下载：19/0  |  提交时间：2011/09/14
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Improved performance in organic light emitting diodes with a mixed electron donor-acceptor film involved in hole injection 期刊论文
journal of applied physics, 2007, 卷号: 101, 期号: 12, 页码: art.no.124507
Cao GH (Cao Guohua); Qin DS (Qin Dashan); Cao JS (Cao Junsong); Guan M (Guan Min); Zeng YP (Zeng Yiping); Li JM (Li Jinmin)
收藏  |  浏览/下载：47/0  |  提交时间：2010/03/29
Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures 期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 17, 页码: art.no.173507
Zhao J (Zhao, Jianzhi); Lin Z (Lin, Zhaojun); Corrigan TD (Corrigan, Timothy D.); Wang Z (Wang, Zhen); You Z (You, Zhidong); Wang Z (Wang, Zhanguo)
收藏  |  浏览/下载：60/0  |  提交时间：2010/03/29

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