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科研机构
半导体研究所 [44]
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期刊论文 [34]
会议论文 [10]
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2009 [1]
2008 [2]
2006 [2]
2005 [1]
2004 [2]
2003 [4]
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半导体材料 [44]
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Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
期刊论文
journal of optoelectronics and advanced materials, 2009, 卷号: 11, 期号: 8, 页码: 1122-1126
Li H
;
Wang Z
;
Zhou K
;
Pang JB
;
Ke JY
;
Zhao YW
收藏
  |  
浏览/下载:59/1
  |  
提交时间:2010/03/08
GaSb
Proton irradiation
Defects
Positron lifetime
Photoluminescence
First-principles study of native defects in rutile TiO2
期刊论文
physics letters a, 2008, 卷号: 372, 期号: 9, 页码: 1527-1530
Peng, H
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  |  
浏览/下载:87/28
  |  
提交时间:2010/03/08
defects
rutile
TiO2
first-principles
Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method
期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 3, 页码: 639-645
Wei, XC
;
Zhao, YW
;
Dong, ZY
;
Li, JM
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  |  
浏览/下载:52/0
  |  
提交时间:2010/03/08
defects
X-ray diffraction
growth from vapor
oxides
semiconducting II-VI materials
Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837
Liu XF (Liu Xing-Fang)
;
Sun GS (Sun Guo-Sheng)
;
Li JM (Li Jin-Min)
;
Zhao YM (Zhao Yong-Mei)
;
Li JY (Li Jia-Ye)
;
Wang L (Wang Lei)
;
Zhao WS (Zhao Wan-Shun)
;
Zeng YP (Zeng Yi-Ping)
收藏
  |  
浏览/下载:75/0
  |  
提交时间:2010/04/11
SPECTROSCOPY
GROWTH
POLYTYPES
SILICON
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity Si sensors/detectors
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287
Li Z (Li Z.)
;
Li CJ (Li C. J.)
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  |  
浏览/下载:48/0
  |  
提交时间:2010/04/11
DLTS
defects
detectors
sensors
current transient
SILICON DETECTORS
Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
期刊论文
journal of crystal growth, 2005, 卷号: 286, 期号: 1, 页码: 23-27
作者:
Jin P
;
Xu B
收藏
  |  
浏览/下载:58/0
  |  
提交时间:2010/04/11
defects
lateral composition modulation
photoluminescence
molecular beam epitaxy
quantum wires
semiconductor III-V material
DOTS
HETEROSTRUCTURES
INALAS/INP(001)
SPECTROSCOPY
WAVELENGTH
INP(001)
Defects in GaSb studied by coincidence Doppler broadening measurements
会议论文
13th international conference on positron annihilation (icpa-13), kyoto, japan, sep 07-12, 2003
Hu WG
;
Wang Z
;
Dai YQ
;
Wang SJ
;
Zhao YW
收藏
  |  
浏览/下载:25/1
  |  
提交时间:2010/10/29
coincidence Doppler broadening
defects
GaSb
positron annihilation
Defects in GaSb studied by coincidence Doppler broadening measurements
期刊论文
positron annihilation, 2004, 卷号: icpa-13 proceedings, 期号: 445-6, 页码: 114-116
Hu, WG
;
Wang, Z
;
Dai, YQ
;
Wang, SJ
;
Zhao, YW
收藏
  |  
浏览/下载:129/19
  |  
提交时间:2010/03/09
coincidence Doppler broadening
defects
GaSb
positron annihilation
Void formation and failure in InGaN/AlGaN double heterostructures
期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 404-412
作者:
Han PD
收藏
  |  
浏览/下载:207/2
  |  
提交时间:2010/08/12
defects
metalorganic vapor phase epitaxy
nitrides
semiconducting III-V materials
light emitting diodes
LIGHT-EMITTING-DIODES
MULTIPLE-QUANTUM WELLS
THREADING EDGE DISLOCATION
VAPOR-PHASE EPITAXY
N-TYPE GAN
GALLIUM NITRIDE
GROWTH STOICHIOMETRY
SCATTERING
DEFECTS
LUMINESCENCE
Strain accommodation of 3C-SiC grown on hydrogen-implanted Si (001) substrate
期刊论文
journal of crystal growth, 2003, 卷号: 257, 期号: 3-4, 页码: 321-325
作者:
Li DB
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  |  
浏览/下载:59/0
  |  
提交时间:2010/08/12
substrate
heteroepitaxy
low pressure chemical vapor deposition
semiconducting silicon carbide
COMPLIANT SUBSTRATE
CRITICAL THICKNESS
SILICON
RELAXATION
MECHANISM
DEFECTS
LAYERS
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