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Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载:54/5  |  提交时间:2011/07/05
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载:20/0  |  提交时间:2011/09/14
Growth-Parameter Spaces and Optical Properties of Cubic Boron Nitride Films on Si(001) 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 5, 页码: art. no. 056801
作者:  You JB;  Zhang XW;  Fan YM;  Tan HR
收藏  |  浏览/下载:368/49  |  提交时间:2010/03/08
Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682
Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载:66/0  |  提交时间:2010/04/11
The diphasic nc-Si/a-Si : H thin film with improved medium-range order 会议论文
20th international conference on amorphous and microcrystalline semiconductors, campos do jordao, brazil, aug 25-29, 2003
Zhang S; Liao X; Xu Y; Martins R; Fortunato E; Kong G
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
Controllable growth of semiconductor nanometer structures 期刊论文
microelectronics journal, 2003, 卷号: 34, 期号: 5-8, 页码: 379-382
Wang ZG; Wu J
收藏  |  浏览/下载:290/9  |  提交时间:2010/08/12
Controllable growth of semiconductor nanometer structures 会议论文
conference on low dimensional structures and devices (ldsd), fortaleza, brazil, dec 08-13, 2002
Wang ZG; Wu J
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/15
Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
作者:  Zhao DG
收藏  |  浏览/下载:62/0  |  提交时间:2010/08/12
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:  Xu B
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zeng YP; Cao X; Cui LJ; Kong MY; Pan L; Wang BQ; Zhu ZP
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/15


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