Controllable growth of semiconductor nanometer structures

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	Controllable growth of semiconductor nanometer structures
	Wang ZG ; Wu J
刊名	microelectronics journal
	2003
卷号	34 期号:5-8 页码:379-382
关键词	molecular beam epitaxy nanostructures INAS QUANTUM DOTS SELF-ORGANIZATION MONOLAYER COVERAGE DENSITY GAAS ISLANDS INP(001) EPITAXY
ISSN号	0026-2692
通讯作者	wang zg,chinese acad sci,inst semicond,key lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	self-assembled quantum dots and wires were obtained in the inxga1-xas/gaas and inas/in0.52al0.48as/inp systems, respectively, using molecular beam epitaxy (mbe). uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the mbe growth parameters. in addition, some interesting observation on the inas wire alignment on inp(001) is discussed. (c) 2003 elsevier science ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11528]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang ZG,Wu J. Controllable growth of semiconductor nanometer structures[J]. microelectronics journal,2003,34(5-8):379-382.
APA	Wang ZG,&Wu J.(2003).Controllable growth of semiconductor nanometer structures.microelectronics journal,34(5-8),379-382.
MLA	Wang ZG,et al."Controllable growth of semiconductor nanometer structures".microelectronics journal 34.5-8(2003):379-382.