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CORC

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Design and optimization of evanescently coupled waveguide photodiodes 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 104006
Yao, Chen; Cheng, Yuanbing; Wu, Jian; Xu, Kun; Qiu, Jifang; Zhao, Lingjuan; Wang, Wei; Lin, Jintong
收藏  |  浏览/下载：24/0  |  提交时间：2012/06/14
Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings 期刊论文
journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57
Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG
收藏  |  浏览/下载：71/5  |  提交时间：2011/07/05
Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.33301
作者:  Liu XF;  Yan GG;  Zheng L;  Dong L
收藏  |  浏览/下载：38/3  |  提交时间：2011/07/05
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05
Quantitative surface enhanced Raman scattering detection based on the "sandwich" structure substrate 期刊论文
spectrochimica acta part a-molecular and biomolecular spectroscopy, 2011, 卷号: 79, 期号: 3, 页码: 625-630
作者:  Tang AW
收藏  |  浏览/下载：83/5  |  提交时间：2011/07/15
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：18/0  |  提交时间：2010/12/12
Electric-tunable magneto resistance effect in a two-dimensional electron gas modulated by hybrid magnetic-electric barrier nanostructure 期刊论文
physics letters a, 2009, 卷号: 373, 期号: 22, 页码: 1983-1987
作者:  Zhang XW;  Wang Y;  Yin ZG
收藏  |  浏览/下载：125/57  |  提交时间：2010/03/08
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者:  Ye XL;  Xu B;  Jin P
收藏  |  浏览/下载：90/0  |  提交时间：2010/04/11
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition 期刊论文
journal of vacuum science & technology a, 2003, 卷号: 21, 期号: 4, 页码: 838-841
Qu BZ; Zhu QS; Sun XH; Wan SK; Wang ZG; Nagai H; Kawaguchi Y; Hiramatsu K; Sawaki N
收藏  |  浏览/下载：292/4  |  提交时间：2010/08/12
Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者:  Xu B
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12

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