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Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:  Li GK
收藏  |  浏览/下载：74/2  |  提交时间：2011/07/05
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05
InAs单晶衬底的表面形貌和化学成分分析 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 4, 页码: 878-882
作者:  王俊;  王俊
收藏  |  浏览/下载：31/0  |  提交时间：2011/08/16
Structural and magnetic properties of GaN:Sm:Eu films fabricated by co-implantation method 期刊论文
materials letters, 2010, 卷号: 64, 期号: 9, 页码: 1031-1033
Sun LL (Sun Lili); Liu C (Liu Chao); Li JM (Li Jianming); Wang JX (Wang Junxi); Yan FW (Yan Fawang); Zeng YP (Zeng Yiping); Li JM (Li Jinmin)
收藏  |  浏览/下载：225/60  |  提交时间：2010/05/07
Influence of implantation energy on the characteristics of Mn-implanted nonpolar a-plane GaN films 期刊论文
materials letters, 2009, 卷号: 63, 期号: 3-4, 页码: 451-453
Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载：254/68  |  提交时间：2010/03/08
Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates 期刊论文
applied surface science, 2009, 卷号: 255, 期号: 6, 页码: 3664-3668
Gao HY; Yan FW; Zhang Y; Li JM; Zeng YP; Wang JX
收藏  |  浏览/下载：164/24  |  提交时间：2010/03/08
The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503
Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载：55/1  |  提交时间：2010/03/08
The impact of implantation dose on the characteristics of diluted-magnetic nonpolar GaN:Cu films 期刊论文
materials letters, 2009, 卷号: 63, 期号: 29, 页码: 2574-2576
Sun, LL (Sun, Lili); Yan, FW (Yan, Fawang); Zhang, HX (Zhang, Huixiao); Wang, JX (Wang, Junxi); Zeng, YP (Zeng, Yiping); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)
收藏  |  浏览/下载：170/32  |  提交时间：2010/03/08
Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
作者:  Xu B;  Jin P
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/09
INAS  
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM
收藏  |  浏览/下载：46/0  |  提交时间：2010/03/09

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