CORC

在结果中检索

CORC

浏览/检索结果: 共15条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
Preparation and Optical Performance of Freestanding GaN Thick Films 期刊论文
rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:  Wei TB;  Yang JK;  Duan RF
收藏  |  浏览/下载：58/10  |  提交时间：2011/07/05
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:  Zhao J
收藏  |  浏览/下载：44/4  |  提交时间：2011/07/05
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.)
收藏  |  浏览/下载：20/0  |  提交时间：2010/04/11
P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 15, 页码: art.no.152102
作者:  Yin ZG
收藏  |  浏览/下载：34/0  |  提交时间：2010/04/11
Annealing ambient controlled deep defect formation in InP 会议论文
10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003
Zhao YW; Dong ZY; Duan ML; Sun WR; Zeng YP; Sun NF; Sun TN
收藏  |  浏览/下载：20/1  |  提交时间：2010/10/29
High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD 期刊论文
半导体学报, 2004, 卷号: 25, 期号: 9, 页码: 1091-1096
Zhang Yongxing; Sun Guosheng; Wang Lei; Zhao Wanshun; Gao Xin; Zeng Yiping; Li Jinmin; Li Siyuan
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23
Effects of the crystal structure on electrical and optical properties of pyrite FeS2 films prepared by thermally sulfurizing iron films 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 230-238
Wan DY; Wang YT; Wang BY; Ma CX; Sun H; Wei L
收藏  |  浏览/下载：34/0  |  提交时间：2010/08/12
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者:  Zhang SM
收藏  |  浏览/下载：230/30  |  提交时间：2010/08/12
Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文
materials science in semiconductor processing, 2003, 卷号: 6, 期号: 4, 页码: 215-218
Dong HW; Zhao YW; Li JM
收藏  |  浏览/下载：48/0  |  提交时间：2010/08/12

©版权所有 ©2017 CSpace - Powered by CSpace