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Low temperature one-step growth of AlON thin films with homogenous nitrogen doping profile by plasma enhanced atomic layer deposition 期刊论文
ACS Applied Materials & Interfaces, 2017, 卷号: 9, 期号: 44, 页码: 38662-38669
作者:  Hong-Yan Chen;  Hong-Liang Lu;  Jin-Xin Chen;  Feng Zhang;  Xin-Ming Ji
收藏  |  浏览/下载：23/0  |  提交时间：2018/06/15
Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 12, 页码: 128104
Li-Xin Tian; Feng Zhang; Zhan-Wei Shen; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng
收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10
Quantitative characterization of phase separation in the photoactive layer of polymer solar cells by the phase image of atomic force microscopy 期刊论文
thin solid films, 2015, 卷号: 576, 页码: 81-87
H.L. Gao; X.W. Zhang; J.H. Meng; Z.G. Yin; L.Q. Zhang; J.L. Wu; X. Liu
收藏  |  浏览/下载：17/0  |  提交时间：2016/03/23
Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC 期刊论文
journal of applied physics, 2013, 卷号: 113, 期号: 4, 页码: 044112
Zhang, Feng; Sun, Guosheng; Zeng, Yiping
收藏  |  浏览/下载：17/0  |  提交时间：2013/09/22
Atomic Layer Deposition of BiFeO3 Thin Films Using β_ Diketonates and H2O 期刊论文
J. Phys. Chem. C, 2013, 卷号: 117, 页码: 24579–24585
Feng Zhang , Guosheng Sun , Wanshun Zhao , Lei Wang , Liu Zheng , Shengbei Liu , Bin Liu , Lin Dong , Xingfang Liu , Guoguo Yan , Lixin Tian , and Yiping Zeng
收藏  |  浏览/下载：23/0  |  提交时间：2014/03/19
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：119/2  |  提交时间：2011/07/05
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:  Yang T;  Yang XG;  Wang KF
收藏  |  浏览/下载：65/2  |  提交时间：2011/07/05
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL; Chen YH; Jiang CY; Liu Y; Ma H
收藏  |  浏览/下载：36/4  |  提交时间：2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  
收藏  |  浏览/下载：54/5  |  提交时间：2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  
收藏  |  浏览/下载：86/4  |  提交时间：2011/07/05

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