CORC

在结果中检索

CORC

浏览/检索结果: 共81条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors 期刊论文
solid state communications, 2013, 卷号: 153, 期号: 1, 页码: 53-57
Ji, Dong; Lu, Yanwu; Liu, Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo
收藏  |  浏览/下载：27/0  |  提交时间：2013/10/10
Impact of the misfit dislocations on two-dimensional electron gas mobility in semi-polar AlGaN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 100, 期号: 8, 页码: 082101
Liu, Guipeng; Wu, Ju; Zhao, Guijuan; Liu, Shuman; Mao, Wei; Hao, Yue; Liu, Changbo; Yang, Shaoyan; Liu, Xianglin; Zhu, Qinsheng; Wang, Zhanguo
收藏  |  浏览/下载：21/0  |  提交时间：2013/05/07
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding JQ (Ding, Jieqin); Wang XL (Wang, Xiaoliang); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Chen H (Chen, Hong); Bi Y (Bi, Yang); Deng QW (Deng, Qinwen); Zhang JW (Zhang, Jingwen); Hou X (Hou, Xun)
收藏  |  浏览/下载：22/0  |  提交时间：2013/03/26
A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 18, 页码: 182102
Ding, Jieqin; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Chen, Hong; Bi, Yang; Deng, Qinwen; Zhang, Jingwen; Hou, Xun
收藏  |  浏览/下载：13/0  |  提交时间：2013/04/19
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：23/0  |  提交时间：2012/02/06
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：57/2  |  提交时间：2011/07/05
Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.123512
Lv YJ; Lin ZJ; Zhang Y; Meng LG; Luan CB; Cao ZF; Chen H; Wang ZG
收藏  |  浏览/下载：67/9  |  提交时间：2011/07/05
Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 3, 页码: article no.32103
Li GD; Jiang C; Zhu QS; Sakaki H
收藏  |  浏览/下载：60/9  |  提交时间：2011/07/05
Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 12, 页码: article no.122104
作者:  Yu JL
收藏  |  浏览/下载：44/2  |  提交时间：2011/07/05
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05

©版权所有 ©2017 CSpace - Powered by CSpace