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CORC

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Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides 期刊论文
acs appl mater interfaces, 2016, 卷号: 8, 期号: 24, 页码: 15574-15581
Yongtao Li; Yan Wang; Le Huang; Xiaoting Wang; Xingyun Li; Hui-Xiong Deng; Zhongming Wei; Jingbo Li
收藏  |  浏览/下载：26/0  |  提交时间：2017/03/10
Study on the response of InAs nanowire transistors to H2O and NO2 期刊论文
sensors and actuators b-chemical volume, 2015, 卷号: 209, 页码: 456–461
Xintong Zhang; Mengqi Fu; Xing Li; Tuanwei Shi; Zhiyuan Ning; Xiaoye Wang
收藏  |  浏览/下载：21/0  |  提交时间：2016/03/22
Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors 期刊论文
chin. phys. lett., 2015, 卷号: 32, 期号: 12, 页码: 127301
Yan Jun-Da; Wang Quan; Wang Xiao-Liang; Xiao Hong-Ling; Jiang Li-Juan; Yin Hai-Bo; Feng Chun; Wang Cui-Mei; Qu Shen-Qi; Gong Jia-Min; Zhang Bo; Li Bai-Quan; Wang Zhan-Guo; Hou Xun
收藏  |  浏览/下载：31/0  |  提交时间：2016/03/29
Specific detection of mercury(II) irons using AlGaAs/InGaAs high electron mobility transistors 期刊论文
journal of crystal growth, 2015, 卷号: 425, 页码: 381-384
Chengyan Wang; Yang Zhang; Min Guan; Lijie Cui; Kai Ding; Bintian Zhang; Zhang Lin; Feng Huang; Yiping Zeng
收藏  |  浏览/下载：15/0  |  提交时间：2016/03/29
Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors 期刊论文
optics express, 2014, 卷号: 22, 期号: 2, 页码: 1806-1814
Huo, WJ; Liang, S; Zhang, C; Tan, SY; Han, LS; Xie, HY; Zhu, HL; Wang, W
收藏  |  浏览/下载：16/0  |  提交时间：2015/05/11
Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 4, 页码: 044507
Luan, CB; Lin, ZJ; Lv, YJ; Zhao, JT; Wang, YT; Chen, H; Wang, ZG
收藏  |  浏览/下载：15/0  |  提交时间：2015/03/19
Fabrication and characterization of deep ridge InGaAsP/InP light emitting transistors 期刊论文
optics express, 2014, 卷号: 22, 期号: 2, 页码: 1806-1814
Huo, WJ; Liang, S; Zhang, C; Tan, SY; Han, LS; Xie, HY; Zhu, HL; Wang, W
收藏  |  浏览/下载：14/0  |  提交时间：2015/04/02
Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文
ieee electron device letters, 2014, 卷号: 35, 期号: 3, 页码: 333-335
Ding, K; Wang, CY; Zhang, BT; Zhang, Y; Guan, M; Cui, LJ; Zhang, YW; Zeng, YP; Lin, Z; Huang, F
收藏  |  浏览/下载：19/0  |  提交时间：2015/04/02
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier 期刊论文
applied physics express, 2013, 卷号: 6, 期号: 5, 页码: 051201
Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang, Xiaoliang
收藏  |  浏览/下载：11/0  |  提交时间：2013/08/27

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