Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides

	Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides
	Yongtao Li ; Yan Wang ; Le Huang ; Xiaoting Wang ; Xingyun Li ; Hui-Xiong Deng ; Zhongming Wei ; Jingbo Li
刊名	acs appl mater interfaces
	2016
卷号	8 期号:24 页码:15574-15581
学科主题	半导体材料
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27782]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Yongtao Li,Yan Wang,Le Huang,et al. Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides[J]. acs appl mater interfaces,2016,8(24):15574-15581.
APA	Yongtao Li.,Yan Wang.,Le Huang.,Xiaoting Wang.,Xingyun Li.,...&Jingbo Li.(2016).Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides.acs appl mater interfaces,8(24),15574-15581.
MLA	Yongtao Li,et al."Anti-ambipolar Field-Effect Transistors Based On Few-Layer 2D Transition Metal Dichalcogenides".acs appl mater interfaces 8.24(2016):15574-15581.