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| Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors 期刊论文 applied physics a-materials science & processing, 2007, 卷号: 86, 期号: 1, 页码: 19-22 Li RY (Li R. Y.); Wang ZG (Wang Z. G.); Xu B (Xu B.); Jin P (Jin P.); Guo X (Guo X.); Chen M (Chen M.)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:59/0  |  提交时间:2010/04/11
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| Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer 期刊论文 journal of physics d-applied physics, 2006, 卷号: 39, 期号: 2, 页码: 269-273 Shen WJ; Wang J; Wang QY; Duan Y; Zeng YP
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11
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| Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors 期刊论文 journal of vacuum science & technology b, 2005, 卷号: 23, 期号: 5, 页码: 2137-2140 作者: Xu B ; Jin P![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:141/18  |  提交时间:2010/03/17
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| Crystallization of amorphous Si films by pulsed laser annealing and their structural characteristics 期刊论文 semiconductor science and technology, 2004, 卷号: 19, 期号: 6, 页码: 759-763 Peng YC; Fu GS; Yu W; Li SQ; Wang YL
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:54/15  |  提交时间:2010/03/09
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| Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375 Kong MY; Zhang JP; Wang XL; Sun DZ
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:99/8  |  提交时间:2010/08/12
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| Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD 期刊论文 thin solid films, 2001, 卷号: 395, 期号: 1-2, 页码: 213-216 Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:161/11  |  提交时间:2010/08/12
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| Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition 期刊论文 applied physics a-materials science & processing, 2000, 卷号: 70, 期号: 4, 页码: 449-451 Luo GL; Chen PY; Lin XF; Tsien P; Fan TW
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:51/0  |  提交时间:2010/08/12
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| Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 期刊论文 journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 429-432 Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:31/0  |  提交时间:2010/08/12
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| Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions 期刊论文 thin solid films, 1999, 卷号: 346, 期号: 1-2, 页码: 91-95 Poulsen PR; Wang MX; Xu J; Li W; Chen KJ; Wang GH; Feng D
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12
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