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科研机构
半导体研究所 [9]
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会议论文 [9]
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2010 [1]
2006 [1]
2003 [2]
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半导体材料 [9]
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学科主题:半导体材料
内容类型:会议论文
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Donor defect in P-diffused bulk ZnO single crystal
会议论文
29th international conference on physics of semiconductors, rio de janeiro, brazil, 2009
Zhao YW (Zhao Youwen)
;
Zhang R (Zhang Rui)
;
Zhang F (Zhang Fan)
;
Dong ZY (Dong Zhiyuan)
;
Yang J (Yang Jun)
收藏
  |  
浏览/下载:463/158
  |  
提交时间:2010/10/11
Zinc Oxide
doping
defect
Growth of ZnO single crystal by chemical vapor transport method
会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Zhou, JM
;
Dong, ZY
;
Wei, XC
;
Duan, ML
;
Li, JM
收藏
  |  
浏览/下载:564/45
  |  
提交时间:2010/03/29
zinc oxide
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth
会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Zhang ZC
;
Ren BY
;
Chen YH
;
Yang SY
;
Wang ZG
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/11/15
Czochralski method
growth from melt
semiconductor silicon
argon gas flow
computer simulation
oxygen content
FURNACE PRESSURE
High-mobility Ga-polarity GaN achieved by NH3-MBE
会议论文
symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002
Wang JX
;
Wang XL
;
Sun DZ
;
Li JM
;
Zeng YP
;
Hu GX
;
Liu HX
;
Lin LY
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
ION-SCATTERING SPECTROSCOPY
LATTICE POLARITY
SINGLE-CRYSTALS
FILMS
POLARIZATION
GAN(0001)
SURFACES
GROWTH
DIODES
Space-grown SI-GaAs and its application
会议论文
12th international semicoducting and insulating materials conference (simc-xii2002), smolenice, slovakia, jun 30-jul 05, 2002
Chen NF
;
Zhong XG
;
Zhang M
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
SEMIINSULATING GALLIUM-ARSENIDE
FLOATING-ZONE GROWTH
CRYSTAL-GROWTH
ZERO GRAVITY
MICROGRAVITY
SEGREGATION
STOICHIOMETRY
SILICON
DEFECTS
INSB
Semi-insulating GaAs grown in outer space
会议论文
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Chen NF
;
Zhong XR
;
Lin LY
;
Xie X
;
Zhang M
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/15
GaAs
outer space
microgravity
integrated circuit
SEMIINSULATING GALLIUM-ARSENIDE
LEC-GAAS
DEFECTS
STOICHIOMETRY
SEGREGATION
CARBON
BORON
The effects of carbonized buffer layer on the growth of SiC on Si
会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Wang YS
;
Li JM
;
Zhang FF
;
Lin LY
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
HETEROEPITAXIAL GROWTH
HYDROCARBON RADICALS
SI(001) SURFACE
BEAM
Stoichiometry in GaAs grown in outer space measured nondestructively
会议论文
9th international symposium on nondestructive characterization of materials, sydney, australia, jun 28-jul 02, 1999
Chen NF
;
Zhong XG
;
Lin LY
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2010/10/29
SEMIINSULATING GALLIUM-ARSENIDE
CRYSTALS
DEFECTS
Twin and grain boundary in InP: A synchrotron radiation study
会议论文
symposium on applications of synchrotron radiation techniques to materials science iv, san francisco, ca, apr 13-17, 1998
Han YJ
;
Jiang JH
;
Wang ZG
;
Liu XL
;
Jiao JH
;
Tian YL
;
Lin LY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
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