Twin and grain boundary in InP: A synchrotron radiation study

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	Twin and grain boundary in InP: A synchrotron radiation study
	Han YJ ; Jiang JH ; Wang ZG ; Liu XL ; Jiao JH ; Tian YL ; Lin LY
	1998
会议名称	symposium on applications of synchrotron radiation techniques to materials science iv
会议日期	apr 13-17, 1998
会议地点	san francisco, ca
页码	77-80
通讯作者	han yj chinese acad sci inst semicond pob 912 beijing 100083 peoples r china.
中文摘要	experimentally observed x-ray reflectivity curves show bi-crystal(twin) characteristics. the study revealed that there was defect segregation at the twin boundary. stress was relaxed at the edge of the boundary. relaxation of the stress resulted in formation of twin and other defects. as a result of formation of such defects, a defect-free and stress-free zone or low defect density and small stress zone is created around the defects. so a twin model was proposed to explain the experimental results. stress(mainly thermal stress), chemical stoichiometry deviation and impurities nonhomogeneous distributions are the key factors that cause twins in lec inp crystal growth. twins on (111) face in lec inp crystal were studied. experimental evidence of above mentioned twin model and suggestions on how to get twin-free lec inp single crystals will be discussed.
收录类别	CPCI-S
会议主办者	phys electr.; blake ind.; luxel corp.; lawrence livermore natl lab, dept chem & mat sci.; lawrence berkeley natl lab, adv light source.; brookhaven natl lab, natl synchrotron light source.
会议录	applications of synchrotron radiation techniques to materials science iv, 524
会议录出版者	materials research society ; 506 keystone drive, warrendale, pa 15088-7563 usa
会议录出版地	506 keystone drive, warrendale, pa 15088-7563 usa
学科主题	半导体材料
语种	英语
ISSN号	0272-9172
ISBN号	1-55899-430-0
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13843]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han YJ,Jiang JH,Wang ZG,et al. Twin and grain boundary in InP: A synchrotron radiation study[C]. 见:symposium on applications of synchrotron radiation techniques to materials science iv. san francisco, ca. apr 13-17, 1998.