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The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM
收藏  |  浏览/下载:167/71  |  提交时间:2010/03/29
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Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC
收藏  |  浏览/下载:18/1  |  提交时间:2010/10/29
Edge dislocation of b=[001]/2 in the InAs nanostructure on InP(001) 会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Wang YL; Wu J; Chen YH; Wang ZG; Zeng YP
收藏  |  浏览/下载:124/17  |  提交时间:2010/03/29
Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing 会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载:82/12  |  提交时间:2010/03/29
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
international conference on material for advanced technologies, singapore, singapore, jul 01-06, 2001
Xie MH; Cheung SH; Zheng LX; Tong SY; Zhang BS; Yang H
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/15
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zeng YP; Cao X; Cui LJ; Kong MY; Pan L; Wang BQ; Zhu ZP
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/15
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Qu B; Zheng XH; Wang YT; Xu DP; Lin SM; Yang H; Liang JW
收藏  |  浏览/下载:23/0  |  提交时间:2010/11/15
Influence of precipitates on GaN epilayer quality 会议论文
iumrs international conference of advanced materials, beijing, peoples r china, jun 13-18, 1999
Kang JY; Huang QS; Wang ZG
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文
50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999
作者:  Ye XL;  Xu B
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing 会议论文
5th international conference on solid-state and integrated circuit technology, beijing, peoples r china, oct 21-23, 1998
Mo QW; Fan TW; Gong Q; Wu J; Wang ZG; Bai YQ; Zhang W
收藏  |  浏览/下载:25/0  |  提交时间:2010/10/29


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