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科研机构
半导体研究所 [9]
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会议论文 [9]
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2011 [1]
2006 [2]
2004 [1]
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半导体材料 [9]
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学科主题:半导体材料
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Terahertz quantum cascade lasers operating above liquid nitrogen temperature
会议论文
3rd international photonics and optoelectronics meetings, wuhan, peoples r china, nov 02-05, 2010
作者:
Li L
;
Chen JY
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2011/07/26
The study of high temperature annealing of a-SiC : H films
会议论文
3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005
Zhang, S
;
Hu, Z
;
Raniero, L
;
Liao, X
;
Ferreira, I
;
Fortunato, E
;
Vilarinho, P
;
Perreira, L
;
Martins, R
收藏
  |  
浏览/下载:209/71
  |  
提交时间:2010/03/29
silicon carbide
high temperature annealing
thin film
SILICON
PECVD
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
收藏
  |  
浏览/下载:95/18
  |  
提交时间:2010/03/29
ZnO
MOCVD
thermal annealing
photoluminescence
x-ray diffraction
atomic force microscopy
PULSED-LASER DEPOSITION
THIN-FILMS
PHOTOLUMINESCENCE
MECHANISMS
EPITAXY
CVD
SI
Liquid nitrogen flowrate alarm system for MBE
会议论文
5th international conference on thin film physics and applications, shanghai, peoples r china, may 31-jun 02, 2004
Sun YW
;
Li SY
;
Ni HQ
;
Xu Y
;
Chen LH
收藏
  |  
浏览/下载:217/28
  |  
提交时间:2010/03/29
liquid nitrogen(LN2)
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
会议论文
international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001
Sun GS
;
Luo MC
;
Wang L
;
Zhu SR
;
Li JM
;
Zeng YP
;
Lin LY
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
3C-SiC
in-situ doping
low-pressure CVD
sapphire substrate
CHEMICAL-VAPOR-DEPOSITION
COMPETITION EPITAXY
Hydrogen behavior in GaN epilayers grown by NH3-MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY
;
Zhang JP
;
Wang XL
;
Sun DZ
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
impurities
molecular beam epitaxy
nitrides
semiconducting III-V materials
GALLIUM NITRIDE
SAPPHIRE SUBSTRATE
DEFECTS
HETEROSTRUCTURE
SEMICONDUCTORS
STRESS
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zheng LX
;
Xie MH
;
Xu SJ
;
Cheung SH
;
Tong SY
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
surface processes
molecular beam epitaxy
nitrides
semiconducting gallium compounds
GAN(0001) SURFACES
RECONSTRUCTIONS
Epitaxial growth of GaNAs/GaAs heterostructure materials
会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Lin YW
;
Pan Z
;
Li LH
;
Zhou ZQ
;
Wang H
;
Zhang W
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/15
GaNAs
DC active N-2 plasma
molecular beam epitaxy
nitrogen content
Fourier transform infrared spectroscopy of intensity
BAND-GAP ENERGY
GAAS1-XNX
NITROGEN
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface
会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhang JP
;
Sun DZ
;
Li XB
;
Wang XL
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2010/11/15
STRESS
GROWTH
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