CORC

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Terahertz quantum cascade lasers operating above liquid nitrogen temperature 会议论文
3rd international photonics and optoelectronics meetings, wuhan, peoples r china, nov 02-05, 2010
作者:  Li L;  Chen JY
收藏  |  浏览/下载:28/0  |  提交时间:2011/07/26
The study of high temperature annealing of a-SiC : H films 会议论文
3rd international materials symposium/12th meeting of the sociedad-portuguesa-da-materials (materials 2005/spm), aveiro, portugal, mar 20-23, 2005
Zhang, S; Hu, Z; Raniero, L; Liao, X; Ferreira, I; Fortunato, E; Vilarinho, P; Perreira, L; Martins, R
收藏  |  浏览/下载:209/71  |  提交时间:2010/03/29
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文
20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005
Shen, WJ; Duan, Y; Wang, J; Wang, QY; Zeng, YP
收藏  |  浏览/下载:95/18  |  提交时间:2010/03/29
Liquid nitrogen flowrate alarm system for MBE 会议论文
5th international conference on thin film physics and applications, shanghai, peoples r china, may 31-jun 02, 2004
Sun YW; Li SY; Ni HQ; Xu Y; Chen LH
收藏  |  浏览/下载:217/28  |  提交时间:2010/03/29
In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文
international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001
Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY
收藏  |  浏览/下载:13/0  |  提交时间:2010/11/15
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/15
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY
收藏  |  浏览/下载:14/0  |  提交时间:2010/11/15
Epitaxial growth of GaNAs/GaAs heterostructure materials 会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/15
Electrical properties of GaN deposited on nitridated sapphire by molecular beam epitaxy using NH3 cracked on the growing surface 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Zhang JP; Sun DZ; Li XB; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/15
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