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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices 会议论文 3rd ieee international nanoelectronics conference, hong kong, peoples r china, jan 03-08, 2010 Jin P (Jin P.); Lv XQ (Lv X. Q.); Liu N (Liu N.); Zhang ZY (Zhang Z. Y.); Wang ZG (Wang Z. G.) 收藏  |  浏览/下载：33/0  |  提交时间：2010/11/01 SUPERLUMINESCENT DIODES   Combined transparent electrodes for high power GaN-based LEDs with long life time 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 Wang, LC; Yi, XY; Wang, XD; Wang, GH; Li, JM 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09 LIGHT-EMITTING-DIODES  EFFICIENCY   Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 作者:  Xu B;  Ye XL;  Jin P 收藏  |  浏览/下载：92/22  |  提交时间：2010/03/29 DOTS   MOCVD growth of cubic GaN: Materials and devices 会议论文 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者:  Zhao DG;  Zhang SM 收藏  |  浏览/下载：17/0  |  提交时间：2010/10/29 MOCVD  GaN  InGaN  cubic  LED  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  GALLIUM NITRIDE  PHASE EPITAXY  INGAN FILMS  ELECTROLUMINESCENCE  ZINCBLENDE  WURTZITE  MBE   The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文 2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998 Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 SAPPHIRE   Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD 会议论文 2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998 Wang LS; Yue GZ; Liu XL; Wang XH; Wang CX; Wang D; Lu DC; Wang ZG 收藏  |  浏览/下载：22/0  |  提交时间：2010/10/29 METASTABILITY  ANTISITE   MOVPE growth of GaN and LED on (111) MgAl2O4 会议论文 2nd international conference on nitride semiconductors (icns 97), tokushima city, japan, oct 27-31, 1997 Duan SK; Teng XG; Wang YT; Li GH; Jiang HX; Han P; Lu DC 收藏  |  浏览/下载：5/0  |  提交时间：2010/11/15 GaN  MgAl2O4  MOVPE  LED  DIODES   Growth and characterization of GaN on LiGaO2 and LiAlO2 会议论文 2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998 作者:  Han PD 收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29 DIODES