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科研机构
半导体研究所 [13]
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会议论文 [13]
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2006 [3]
2004 [2]
2003 [1]
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半导体材料 [13]
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学科主题:半导体材料
内容类型:会议论文
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Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells
会议论文
21st international conference on amorphous and nanocrystalline semiconductors, lisbon, portugal, sep 04-09, 2005
Hu ZH (Hu Zhihua)
;
Liao XB (Liao Xianbo)
;
Diao HW (Diao Hongwei)
;
Cai Y (Cai Yi)
;
Zhang SB (Zhang Shibin)
;
Fortunato E (Fortunato Elvira)
;
Martins R (Martins Rodrigo)
收藏
  |  
浏览/下载:520/27
  |  
提交时间:2010/03/29
silicon
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:167/71
  |  
提交时间:2010/03/29
ALN
IMPURITIES
DONOR
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:100/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Growth and characterization of 4H-SiC by horizontal hot-wall CVD
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Sun, GS
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:134/34
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Liquid nitrogen flowrate alarm system for MBE
会议论文
5th international conference on thin film physics and applications, shanghai, peoples r china, may 31-jun 02, 2004
Sun YW
;
Li SY
;
Ni HQ
;
Xu Y
;
Chen LH
收藏
  |  
浏览/下载:217/28
  |  
提交时间:2010/03/29
liquid nitrogen(LN2)
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
会议论文
10th international conference on high pressures in semiconductor physics (hpsp-x), guildford, england, aug 05-08, 2002
Li Q
;
Fang ZL
;
Xu SJ
;
Li GH
;
Xie MH
;
Tong SY
;
Zhang XH
;
Liu W
;
Chua SJ
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
PIEZOELECTRIC FIELD
PHOTOLUMINESCENCE
TEMPERATURE
Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon
会议论文
symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002
Tan LW
;
Wang J
;
Wang QY
;
Yu YH
;
Lin LY
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2010/11/15
EPITAXIAL-GROWTH
AL2O3
SI
Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
会议论文
1st international conference on cat-cvd (hot wire cvd) process, kanazawa, japan, nov 14-17, 2000
Feng Y
;
Zhu M
;
Liu F
;
Liu J
;
Han H
;
Han Y
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/11/15
poly-Si
structure
hot-wire
plasma-enhanced chemical vapor deposition (PECVD)
CHEMICAL-VAPOR-DEPOSITION
MICROCRYSTALLINE SILICON
HYDROGEN
High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers
会议论文
international-union-of-materials-research-societies international conference on advanced materials (iumrs-icam 99), beijing, peoples r china, jun 13-18, 1999
Chen LH
;
Xu ZT
;
Ma XY
;
Zhang JM
;
Yang GW
;
Xu JY
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
high power
Al-free laser
communication
EPITAXY
The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy
会议论文
2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998
Wang LS
;
Liu XL
;
Zan YD
;
Wang D
;
Lu DC
;
Wang ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/10/29
SAPPHIRE
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