Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
	Li Q ; Fang ZL ; Xu SJ ; Li GH ; Xie MH ; Tong SY ; Zhang XH ; Liu W ; Chua SJ
	2003
会议名称	10th international conference on high pressures in semiconductor physics (hpsp-x)
会议日期	aug 05-08, 2002
会议地点	guildford, england
关键词	PIEZOELECTRIC FIELD PHOTOLUMINESCENCE TEMPERATURE
页码	427-431
通讯作者	xu sj univ hong kong dept phys pokfulam rd hong kong hong kong peoples r china.
中文摘要	excitation-power dependence of hydrostatic pressure coefficients (de/dp) of inxga1-xn/inyga1-yn multiple quantum wells is reported. when the excitation power increases from 1.0 to 33 mw, de/dp increases from 26.9 to 33.8 mev/gpa, which is an increase by 25%. a saturation behavior of de/dp with the excitation power is observed. the increment of de/dp with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.
英文摘要	excitation-power dependence of hydrostatic pressure coefficients (de/dp) of inxga1-xn/inyga1-yn multiple quantum wells is reported. when the excitation power increases from 1.0 to 33 mw, de/dp increases from 26.9 to 33.8 mev/gpa, which is an increase by 25%. a saturation behavior of de/dp with the excitation power is observed. the increment of de/dp with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:07导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:07z (gmt). no. of bitstreams: 1 2826.pdf: 320361 bytes, checksum: 3e0bd3634c216fb611a16c5a81ebe8c5 (md5) previous issue date: 2003; 会议主办方: univ surrey; univ hong kong, dept phys, hong kong, hong kong, peoples r china; univ hong kong, hku cas joint lab new mat, hong kong, hong kong, peoples r china; chinese acad sci, inst semicond, natl lab supperlattices & microstruct, beijing 100083, peoples r china; city univ hong kong, dept phys & mat sci, kowloon, hong kong, peoples r china; inst mat res & engn, singapore 117602, singapore
收录类别	CPCI-S
会议主办者	会议主办方: univ surrey
会议录	physica status solidi b-basic research, 235 (2)
会议录出版者	wiley-v c h verlag gmbh ; po box 10 11 61, d-69451 weinheim, germany
会议录出版地	po box 10 11 61, d-69451 weinheim, germany
学科主题	半导体材料
语种	英语
ISSN号	0370-1972
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/14863]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li Q,Fang ZL,Xu SJ,et al. Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells[C]. 见:10th international conference on high pressures in semiconductor physics (hpsp-x). guildford, england. aug 05-08, 2002.