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科研机构
半导体研究所 [18]
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会议论文 [18]
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2008 [2]
2006 [6]
2004 [2]
2003 [1]
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半导体材料 [18]
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Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/03/09
INDUCED REFRACTIVE-INDEX
GROWTH
LASERS
GAAS
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Ji, G
;
Sun, GS
;
Ning, J
;
Liu, XF
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Zeng, YP
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots
会议论文
4th international conference on silicon epitaxy and heterostructures, awaji isl, japan, may 23-26, 2005
Yu, J
;
Kasper, E
;
Oehme, M
收藏
  |  
浏览/下载:146/20
  |  
提交时间:2010/03/29
SiGe
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:100/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Growth and characterization of semi-insulating GaN films grown by MOCVD
会议论文
3rd asian conference on crystal growth and crystal technology (cgct-3), beijing, peoples r china, oct 16-19, 2005
Fang, CB
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Wang, CM
;
Li, JM
收藏
  |  
浏览/下载:202/36
  |  
提交时间:2010/03/29
MOCVD
Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Zhou HY
;
Qu SC
;
Wang ZG
;
Liang LY
;
Cheng BC
;
Liu JP
;
Peng WQ
收藏
  |  
浏览/下载:132/26
  |  
提交时间:2010/03/29
anodic alumina films
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
收藏
  |  
浏览/下载:95/18
  |  
提交时间:2010/03/29
ZnO
MOCVD
thermal annealing
photoluminescence
x-ray diffraction
atomic force microscopy
PULSED-LASER DEPOSITION
THIN-FILMS
PHOTOLUMINESCENCE
MECHANISMS
EPITAXY
CVD
SI
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
会议论文
11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005
Sun, GS (Sun, G. S.)
;
Liu, XF (Liu, X. F.)
;
Gong, QC (Gong, Q. C.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Li, JY (Li, J. Y.)
;
Zeng, YP (Zeng, Y. P.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:166/18
  |  
提交时间:2010/03/29
4H-SiC
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces
会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Sun, GS
;
Ning, J
;
Zhang, YX
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:206/60
  |  
提交时间:2010/03/29
4H-SiC
LPCVD homoepitaxial growth
thermal oxidization
MOS structures
HOT-WALL CVD
Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition
会议论文
7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004
Wang, QY
;
Shen, WJ
;
Wang, J
;
Wang, JH
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:195/31
  |  
提交时间:2010/03/29
ULTRAVIOLET-LASER EMISSION
THIN-FILMS
ZINC-OXIDE
ROOM-TEMPERATURE
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