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半导体研究所 [26]
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期刊论文 [22]
会议论文 [4]
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2013 [1]
2011 [2]
2010 [2]
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光电子学 [26]
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Measurement of Linewidth Enhancement Factor for 1.3-μm InAs/GaAs Quantum Dot Lasers
期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 卷号: 25, 期号: 5, 页码: 488
Jin-Long Xiao, Chu-Cai Guo, Hai-Ming Ji, Peng-Fei Xu, Qi-Feng Yao, Xiao-Meng Lv, Ling-Xiu Zou,Heng Long, Tao Yang, and Yong-Zhen Huang
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浏览/下载:10/0
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提交时间:2014/04/08
Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.24204
作者:
Jiang B
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浏览/下载:65/7
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提交时间:2011/07/06
vertical-cavity surface-emitting lasers
single mode
low divergence angle
graded index profile
OPTICAL INTERCONNECTS
QUANTUM-DOT
WAVE-GUIDE
VCSELS
POWER
FIELD
OPERATION
OXIDATION
DESIGN
FIBERS
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507
Yu X
;
Gu YX
;
Wang Q
;
Wei X
;
Chen LH
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浏览/下载:65/4
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提交时间:2011/07/06
type-II 'W' quantum well
Burt-Foreman Hamiltonian
finite element methods
LASERS
ALLOYS
Optically controlled quantum dot gated transistors with high on/off ratio
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 8, 页码: art. no. 083503
Yang XH (Yang Xiaohong)
;
Xu XL (Xu Xiulai)
;
Wang XP (Wang Xiuping)
;
Ni HQ (Ni Haiqiao)
;
Han Q (Han Qin)
;
Niu ZC (Niu Zhichuan)
;
Williams DA (Williams David A.)
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浏览/下载:68/2
  |  
提交时间:2010/04/22
III-V semiconductors
indium compounds
laser beam applications
nanoelectronics
photoelectric devices
photoelectricity
phototransistors
semiconductor quantum dots
I-N JUNCTIONS
High brightness InAs/GaAs quantum dot tapered laser at 1.3 mu m with high temperature stability
会议论文
conference on semiconductor lasers and applications iv, beijing, peoples r china, oct 18-19, 2010
Cao YL (Cao Yu-Lian)
;
Xu PF (Xu Peng-fei)
;
Ji HM (Ji Hai-Ming)
;
Yang T (Yang Tao)
;
Chen LH (Chen Liang-Hui)
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浏览/下载:53/4
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提交时间:2011/07/14
High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs
期刊论文
ieee photonics technology letters, 2009, 卷号: 21, 期号: 17, 页码: 1211-1213
Xu DW
;
Yoon SF
;
Tong CZ
;
Zhao LJ
;
Ding Y
;
Fan WJ
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浏览/下载:110/2
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提交时间:2010/03/08
Quantum dot (QD)
single-mode
thermal stability
threshold current
vertical-cavity surface-emitting lasers (VCSELs)
Photostability of single-photon emission from a single quantum dot in the 650-nm wavelength band at room temperature
期刊论文
applied physics b-lasers and optics, 2009, 卷号: 94, 期号: 4, 页码: 577-583
Xu X
;
Yamada T
;
Otomo A
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浏览/下载:387/72
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提交时间:2010/03/08
FLUORESCENCE
NANOCRYSTALS
GENERATION
MOLECULE
Large-Signal Performance of 1.3 mu m InAs/GaAs quantum-dot lasers
会议论文
8th pacific rim conference on lasers and electro-optics, shanghai, peoples r china, aug 30-sep 03, 2009
作者:
Yang T
;
Ma WQ
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浏览/下载:159/20
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提交时间:2010/06/04
Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation
期刊论文
optical and quantum electronics, 2009, 卷号: 41, 期号: 8, 页码: 613-626
Xiao JL (Xiao Jin-Long)
;
Yang YD (Yang Yue-De)
;
Huang YZ (Huang Yong-Zhen)
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浏览/下载:89/2
  |  
提交时间:2010/08/17
Quantum dots (QDs)
Semiconductor optical amplifiers (SOAs)
Gain recovery
CARRIER DISTRIBUTION
DYNAMICS
SATURATION
RELAXATION
LASERS
MODEL
Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers
期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 3, 页码: 1896-1900
作者:
Ma WQ
;
Yang T
;
Cao YL
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浏览/下载:241/62
  |  
提交时间:2010/03/08
maximum modal gain
p-doped
InAs/GaAs quantum dot laser
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