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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:  Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL
收藏  |  浏览/下载：46/3  |  提交时间：2011/07/05
Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504
Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie)
收藏  |  浏览/下载：124/5  |  提交时间：2010/04/22
High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors 期刊论文
ieee electron device letters, 2010, 卷号: 31, 期号: 7, 页码: 701-703
Xue HY (Xue Hai-Yun); Xue CL (Xue Chun-Lai); Cheng BW (Cheng Bu-Wen); Yu YD (Yu Yu-De); Wang QM (Wang Qi-Ming)
收藏  |  浏览/下载：44/0  |  提交时间：2010/11/01
Optical properties of InN rods on sapphire grown by metal-organic chemical vapor deposition 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 138-141
作者:  Zhang SM
收藏  |  浏览/下载：58/1  |  提交时间：2011/07/05
1 x 4 Ge-on-SOI PIN Photodetector Array for Parallel Optical Interconnects 期刊论文
journal of lightwave technology, 2009, 卷号: 27, 期号: 24, 页码: 5687-5689
Xue CL (Xue Chunlai); Xue HY (Xue Haiyun); Cheng BW (Cheng Buwen); Hu WX (Hu Weixuan); Yu YD (Yu Yude); Wang QM (Wang Qiming)
收藏  |  浏览/下载：230/40  |  提交时间：2010/03/08
Substantial photo-response of InGaN p-i-n homojunction solar cells 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055009
Zeng SW; Zhang BP; Sun JW; Cai JF; Chen C; Yu JZ
收藏  |  浏览/下载：58/7  |  提交时间：2010/03/08
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09
Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching - art. no. 684107 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP; Wang, GH; Yang, FH
收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Li, Y; Yi, XY; Wang, XD; Guo, JX; Wang, LC; Wang, GH; Yang, FH; Zeng, YP; Li, JM
收藏  |  浏览/下载：50/0  |  提交时间：2010/03/09
GaN  LED  plasma  damage  etch  ICP  PECVD  
High performance 1689-nm quantum well diode lasers 期刊论文
chinese optics letters, 2007, 卷号: 5, 期号: 10, 页码: 585-587
Duan, YP; Lin, T; Wang, CL; Chong, F; Ma, XY
收藏  |  浏览/下载：60/6  |  提交时间：2010/03/08

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