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Highly efficient 1.53 mu m luminescence in ErxYb2-xSi2O7 thin films grown on Si substrate 期刊论文
materials letters, 2011, 卷号: 65, 期号: 5, 页码: 860-862
Zheng J; Tao YL; Wang W; Zhang LZ; Zuo YH; Xue CL; Cheng BW; Wang QM
收藏  |  浏览/下载:65/3  |  提交时间:2011/07/05
Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者:  Xue CL
收藏  |  浏览/下载:63/4  |  提交时间:2011/07/05
Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method 期刊论文
journal of luminescence, 2010, 卷号: 130, 期号: 10, 页码: 1760-1763
Zheng J (Zheng J.); Zuo YH (Zuo Y. H.); Zhang LZ (Zhang L. Z.); Wang W (Wang W.); Xue CL (Xue C. L.); Cheng BW (Cheng B. W.); Yu JZ (Yu J. Z.); Guo HQ (Guo H. Q.); Wang QM (Wang Q. M.)
收藏  |  浏览/下载:105/4  |  提交时间:2010/09/07
Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 289-292
Cai LE; Zhang BP; Zhang JY; Wu CM; Jiang F; Hu XL; Chen M; Wang QM
收藏  |  浏览/下载:43/1  |  提交时间:2011/07/05
DIODES  
An Ameliorated Phase Generated Carrier Demodulation Algorithm With Low Harmonic Distortion and High Stability 期刊论文
journal of lightwave technology, 2010, 卷号: 28, 期号: 22, 页码: 3258-3265
He J (He Jun); Wang L (Wang Lin); Li F (Li Fang); Liu YL (Liu Yuliang)
收藏  |  浏览/下载:45/0  |  提交时间:2010/12/12
The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117801
Hu XL (Hu Xiao-Long); Zhang JY (Zhang Jiang-Yong); Shang JZ (Shang Jing-Zhi); Liu WJ (Liu Wen-Jie); Zhang BP (Zhang Bao-Ping)
收藏  |  浏览/下载:40/0  |  提交时间:2010/12/28
Resonant Enhanced Wave Filter and Waveguide via Surface Plasmons 期刊论文
ieee transactions on nanotechnology, 2009, 卷号: 8, 期号: 3, 页码: 408-411
Guo BS; Song GF; Chen LH
收藏  |  浏览/下载:62/4  |  提交时间:2010/03/08
Effect of beta-irradiation on photoluminescence of MOCVD grown GaN 期刊论文
journal of materials science-materials in electronics, 2009, 卷号: 20, 期号: 1, 页码: 14-16
Majid A; Israr M; Zhu JJ; Ali A
收藏  |  浏览/下载:266/76  |  提交时间:2010/03/08
Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures 期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 6, 页码: 2182-2184
作者:  Yang T
收藏  |  浏览/下载:76/8  |  提交时间:2010/03/08
Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 2, 页码: art. no. 025107
作者:  Yang H;  Lu GJ;  Zhang SM;  Zhao DG;  Yang H
收藏  |  浏览/下载:66/1  |  提交时间:2010/03/08


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