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科研机构
半导体研究所 [13]
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期刊论文 [12]
会议论文 [1]
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2010 [1]
2008 [1]
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光电子学 [13]
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Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy
期刊论文
physica b-condensed matter, 2010, 卷号: 405, 期号: 16, 页码: 3433-3435
Zhao CW (Zhao C. W.)
;
Xing YM (Xing Y. M.)
;
Yu JZ (Yu J. Z.)
;
Han GQ (Han G. Q.)
收藏
  |  
浏览/下载:100/3
  |  
提交时间:2010/09/07
Si/Ge heterostructures
Strain
High-resolution Transmission electron
microscopy
High-temperature AlN interlayer for crack-free AlGaN growth on GaN
期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 4, 页码: art. no. 043516
Sun, Q
;
Wang, JT
;
Wang, H
;
Jin, RQ
;
Jiang, DS
;
Zhu, JJ
;
Zhao, DG
;
Yang, H
;
Zhou, SQ
;
Wu, MF
;
Smeets, D
;
Vantomme, A
收藏
  |  
浏览/下载:74/0
  |  
提交时间:2010/03/08
STRESS
SI(111)
REDUCTION
THICKNESS
Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer
期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 17, 页码: 5252-5255
Liu, W (Liu, W.)
;
Wang, JF (Wang, J. F.)
;
Zhu, JJ (Zhu, J. J.)
;
Jiang, DS (Jiang, D. S.)
;
Yang, H (Yang, H.)
收藏
  |  
浏览/下载:56/0
  |  
提交时间:2010/03/29
STRESS
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:
Zhang SM
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  |  
浏览/下载:84/0
  |  
提交时间:2010/04/11
nitrides
multiple quantum wells
cracks
dislocations
vacancies x-ray diffraction
X-RAY-DIFFRACTION
EDGE DISLOCATIONS
GAN
FILMS
SUPERLATTICES
RELAXATION
STRAIN
Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field
期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 5023-5029
Liu YM (Liu Yu-Min)
;
Yu ZY (Yu Zhong-Yuan)
;
Yang HB (Yang Hong-Bo)
;
Huang YZ (Huang Yong-Zhen)
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/04/11
strain
semiconductor quantum dot
self-organization
ELECTRONIC-STRUCTURE
FINITE-ELEMENT
STATE
Chemical composition and elastic strain in AlInGaN quaternary films
期刊论文
thin solid films, 2006, 卷号: 515, 期号: 4, 页码: 1429-1432
Zhou, SQ (Zhou, Shengqiang)
;
Wu, MF (Wu, M. F.)
;
Yao, SD (Yao, S. D.)
;
Liu, JP (Liu, J. P.)
;
Yang, H (Yang, H.)
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  |  
浏览/下载:36/0
  |  
提交时间:2010/03/29
Rutherford backscattering spectroscopy
Reduction of dislocations in GaN epilayer grown on Si (111) substrates using a GaN intermedial layer
期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2591-2594
Wang JF (Wang Jian-Feng)
;
Zhang BS (Zhang Bao-Shun)
;
Zhang JC (Zhang Ji-Cai)
;
Zhu JJ (Zhu Jian-Jun)
;
Wang YT (Wang Yu-Tian)
;
Chen J (Chen Jun)
;
Liu W (Liu Wei)
;
Jiang DS (Jiang De-Sheng)
;
Yao DZ (Yao Duan-Zheng)
;
Yang H (Yang Hui)
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  |  
浏览/下载:29/0
  |  
提交时间:2010/04/11
CHEMICAL-VAPOR-DEPOSITION
HIGH-QUALITY GAN
ALN BUFFER LAYER
NUCLEATION LAYER
PHASE EPITAXY
EVOLUTION
DENSITY
SILICON
STRESS
SI
Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate
期刊论文
journal of materials science & technology, 2006, 卷号: 22, 期号: 5, 页码: 651-654
Zhao L (Zhao Lei)
;
Zuo YH (Zuo Yuhua)
;
Cheng BW (Cheng Buwen)
;
Yu JZ (Yu Jinzhong)
;
Wang QM (Wang Qiming)
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/04/11
Si1_xGex
Ge content
composition determination
double crystals X-ray diffraction (DCXRD)
micro-Raman measurement
BAND-GAP
HETEROSTRUCTURES
SUPERLATTICES
ALLOYS
RELAXATION
SCATTERING
THICKNESS
STRAIN
Structural characterization of AlGaN/GaN superlattices by x-ray diffraction and Rutherford backscattering
期刊论文
superlattices and microstructures, 2006, 卷号: 40, 期号: 3, 页码: 137-143
Zhou SQ (Zhou Shengqiang)
;
Wu MF (Wu M. F.)
;
Yao SD (Yao S. D.)
;
Zhang BS (Zhang B. S.)
;
Yang H (Yang H.)
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/04/11
nitride semiconductors
superlattice
Rutherford backscattering/channeling
transmission electron microscopy
x-ray diffraction
MULTIPLE-QUANTUM WELLS
OPTICAL-PROPERTIES
INGAN/GAN
STRAIN
INTERFACE
GROWTH
GAN
Strain analysis of InP/InGaAsP wafer bonded on Si by X-ray double crystalline diffraction
期刊论文
materials science and engineering b-solid state materials for advanced technology, 2006, 卷号: 133, 期号: 1-3, 页码: 117-123
Zhao HQ (Zhao Hong-Quan)
;
Yu LJ (Yu Li-Juan)
;
Huang YZ (Huang Yong-Zhen)
;
Wang YT (Wang Yu-Tian)
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/04/11
InP
Si
X-ray double crystalline diffraction
thermal strain
wafer bonding
OPTOELECTRONIC DEVICES
EPITAXIAL OVERGROWTHS
TEMPERATURE
INTERFACE
STRESSES
VCSELS
SURFACES
ENERGY
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