Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy

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	Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy
	Zhao CW (Zhao C. W.) ; Xing YM (Xing Y. M.) ; Yu JZ (Yu J. Z.) ; Han GQ (Han G. Q.)
刊名	physica b-condensed matter
	2010
卷号	405 期号:16 页码:3433-3435
关键词	Si/Ge heterostructures Strain High-resolution Transmission electron microscopy
合作状况	国内
英文摘要	we report the quantitative strain characterization in semiconductor heterostructures of silicon-germaniums (si(0.76)geo(0.24)) grown on si substrate by an ultra-high vacuum chemical vapor deposition system. the relaxed sige virtual substrate has been achieved by thermal annealing of the sige film with an inserted ge layer. strain analysis was performed using a combination of high-resolution transmission electron microscopy and geometric phase analysis.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-09-07t12:14:05z no. of bitstreams: 1 quantitative strain characterization of sige heterostructures by high-resolution transmission electron microscopy.pdf: 455210 bytes, checksum: 3cdae72b8120e24adccaa52baf5346c7 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-09-07t13:08:47z (gmt) no. of bitstreams: 1 quantitative strain characterization of sige heterostructures by high-resolution transmission electron microscopy.pdf: 455210 bytes, checksum: 3cdae72b8120e24adccaa52baf5346c7 (md5); made available in dspace on 2010-09-07t13:08:47z (gmt). no. of bitstreams: 1 quantitative strain characterization of sige heterostructures by high-resolution transmission electron microscopy.pdf: 455210 bytes, checksum: 3cdae72b8120e24adccaa52baf5346c7 (md5) previous issue date: 2010; 国内
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-09-07 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13507]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Zhao CW ,Xing YM ,Yu JZ ,et al. Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy[J]. physica b-condensed matter,2010,405(16):3433-3435.
APA	Zhao CW ,Xing YM ,Yu JZ ,&Han GQ .(2010).Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy.physica b-condensed matter,405(16),3433-3435.
MLA	Zhao CW ,et al."Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy".physica b-condensed matter 405.16(2010):3433-3435.